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Rubric: Proceedings
- General Proceedings
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May 22-26, 2011, Maritim proArte Hotel, Berlin, Germany, Conference Proceedings
2011, 490 pages, 21,0 x 29,7 cm, paperback
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199.00 € Book
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IPRM 2011 continues bringing together scientists from academia and industry to share recent developments and achievements in the area of InP technology. Again optoelectronic and electronic devices including related fabrication processes, and bulk and epitaxial materials as well as nanostructures and novel materials continue to represent major subjects of the conference. In addition Photonic integration technologies have been included as a new topic to highlight the regained importance of this field which proves to be particularly specific to InP.
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| 1 |
AlGaInAs based photonic devices for high-speed data transmissionAuthors:
Yamamoto, Tsuyoshi; Yamamoto, Tsuyoshi; Yamamoto, Tsuyoshi; Simoyama, Takasi; Simoyama, Takasi; Simoyama, Takasi; Tanaka, Shinsuke; Matsuda, Manabu; Matsuda, Manabu; Matsuda, Manabu; Uetake, Ayahito; Uetake, Ayahito; Uetake, Ayahito; Okumura, Shigekazu; Ekawa, Mitsuru; Ekawa, Mitsuru; Ekawa, Mitsuru; Morito, Ken
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| 2 |
Low-Cost 25Gb/s 1300nm Electroabsorption-Modulated InGaAlAs RW-DFB-LaserAuthors:
Moehrle, Martin; Przyrembel, Georges; Bornholdt, Carsten; Sigmund, Ariane; Molzow, Wolf-Dietrich; Klein, Holger
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| 3 |
Low-Threshold 3 µm GaInAsSb/AlGaInAsSb Quantum-Well Lasers Operating in Continuous-Wave up to 64 °CAuthors:
Vizbaras, Kristijonas; Andrejew, Alexander; Vizbaras, Augustinas; Grasse, Christian; Arafin, Shamsul; Amann, Markus-Christian
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| 4 |
Narrow Linewidth 1.52 µm InAs/InP Quantum Dot DFB LasersAuthors:
Poole, P. J.; Lu, Z. G.; Liu, J. R.; Barrios, P.; Jiao, Z. J.; Poitras, D.; SpringThorpe, A. J.; Pakulski, G.; Goodchild, D.; Rioux, B.
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| 5 |
Single-Wavelength InGaAs/AlAs(Sb) Quantum Cascade LasersAuthors:
Slight, Thomas; Slight, Thomas; Phelan, Richard; Revin, Dmitry; McKee, Andrew; Cockburn, John; Kelly, Brian; Ironside, Charles
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| 6 |
InP HBTs for THz Frequency Integrated CircuitsAuthors:
Urteaga, M.; Seo, M.; Hacker, J.; Griffith, Z.; Young, A.; Pierson, R.; Rowell, P.; Skalare, A.; Jain, V.; Lobisser, E.; Rodwell, M. J. W.
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| 7 |
InGaAs/InP DHBTs demonstrating simultaneous ftau/fmax ~ 460/850 GHz in a refractory emitter processAuthors:
Jain, Vibhor; Lobisser, Evan; Baraskar, Ashish; Thibeault, Brian J.; Rodwell, Mark J. W.; Urteaga, M.; Loubychev, D.; Snyder, A.; Wu, Y.; Fastenau, J. M.; Liu, W. K.
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| 8 |
High-Speed and Low-Power Static Frequency Divider and Decision Circuit with 0.5-?m-emitter-width InP HBTsAuthors:
Bouvier, Y.; Nagatani, M.; Sano, K.; Murata, K.; Kurishima, K.; Ida, M.
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| 9 |
InP Lattice-matched HEMT with Regrown Source/Drain by MOCVDAuthors:
Li, Qiang; Li, Ming; Tang, Chak Wah; Lau, Kei May
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| 10 |
Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer depositionAuthors:
Schleeh, J.; Halonen, J.; Nilsson, B.; Nilsson, P. Å.; Zeng, L. J.; Ramvall, P.; Wadefalk, N.; Zirath, H.; Olsson, E.; Grahn, J.
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| 11 |
Metal-cavity Nanolasers - Theory and ExperimentAuthors:
Chuang, Shun Lien; Lu, Chien-Yao; Chang, Shu-Wei; Germann, Tim D.; Pohl, Udo W.; Bimberg, Dieter
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| 12 |
High repetition rate two-section InAs/InP Quantum-Dash Passively Mode Locked LasersAuthors:
Rosales, R.; Merghem, K.; Martinez, A.; Accard, A.; Lelarge, F.; Ramdane, A.
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| 13 |
Improvement of modal gain of InAs/InP Quantum-Dash LasersAuthors:
Merghem, K.; Rosales, R.; Martinez, A.; Patriarche, G.; Ramdane, A.; Chimot, N.; Dijk, F. van; Moustapha-Rabault, Y.; Poingt, F.; Lelarge, F.
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| 14 |
InAs/InGaAsP Quantum Dots Emitting at 1.5 µm for Applications in LasersAuthors:
Semenova, E. S.; Kulkova, I. V.; Kadkhodazadeh, S.; Kadkhodazadeh, S.; Schubert, M.; Dunin-Borkowski, R. E.; Yvind, K.
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| 15 |
Current-injected Quantum-dot Microdisk Lasers Operating at Room TemperatureAuthors:
Mao, M.-H.; Chien, H. C.; Hong, J. Z.
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| 16 |
III-V on Silicon for High-Speed Electronics and CMOS PhotonicsAuthors:
Takenaka, Mitsuru; Takagi, Shinichi
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| 17 |
ALD Al2O3 Activated Direct Wafer Bonding for III-V CMOS Photonics PlatformAuthors:
Ikku, Y.; Yokoyama, M.; Iida, R.; Sugiyama, M.; Nakano, Y.; Takenaka, M.; Takagi, S.
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| 18 |
Optimisation of seed and mask surfaces in epitaxial lateral overgrowth of indium phosphide on silicon for silicon photonicsAuthors:
Junesand, Carl; Hu, Chen; Wang, Zhechao; Metaferia, Wondwosen; Lourdudoss, Sebastian
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| 19 |
Carrier Injection in GaAsPN/GaPN Quantum Wells on SiliconAuthors:
Cornet, C.; Robert, C.; Thanh, T. Nguyen; Guo, W.; Bondi, A.; Elias, G.; Létoublon, A.; Richard, S.; Burin, J.-P.; Perrin, M.; Jancu, J.-M.; Durand, O.; Even, J.; Loualiche, S.; Folliot, H.; Bertru, N.; Ponchet, A.; Corre, A. Le
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| 20 |
Electrical Pumping Febry-Perot Lasing of III-V Layer On Highly Doped Silicon Micro Rib by Plasma Assisted Direct BondingAuthors:
Li, Linghan; Takigawa, Ryo; Higo, Akio; Higurashi, Eiji; Sugiyama, Masakazu; Nakano, Yoshiaki
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| 21 |
Metamorphic and Non-conventional 'Buffer' LayersAuthors:
Kuech, T. F.; Jha, S.; Wiedmann, M. K.; Paulson, C. A.; Babcock, S. E.; Kuan, T. S.; Mawst, L. J.; Kirch, J.; Kimd, Tae Wan
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| 22 |
Metamorphic Te-doped Al0.4In0.6Sb/Ga0.4In0.6Sb HEMT structures for low power and high frequency applicationsAuthors:
Loesch, R.
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| 23 |
Characteristics of Step-Graded InxGa1-xAs and InGaPySb1-y Metamorphic Buffer Layers on GaAs SubstratesAuthors:
Kirch, J.; Dudley, P.; Kim, T.; Radavich, K.; Ruder, S.; Mawst, L. J.; Kuech, T. F.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.
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| 24 |
Structural evaluation of GaAs1-xBix mixed crystals by TEMAuthors:
Ueda, Osamu; Tominaga, Yoriko; Ikenaga, Noriaki; Yoshimoto, Masahiro; Oe, Kunishige
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| 25 |
Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxyAuthors:
Tawil, S. N. M.; Zhou, Y. K.; Krishnamurthy, D.; Emura, S.; Hasegawa, S.; Asahi, H.
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| 26 |
Nanoimprint lithography for photonic devicesAuthors:
Niemi, Tapio
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| 27 |
80deg C Continuous Wave Operation of Photonic-Crystal Nanocavity LasersAuthors:
Takeda, Koji; Sato, Tomonari; Shinya, Akihiko; Nozaki, Kengo; Chen, Chin-Hui; Kawaguchi, Yoshihiro; Taniyama, Hideaki; Notomi, Masaya; Matsuo, Shinji
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| 28 |
Narrow linewidth 1.55 µm laterally-coupled DFB lasers fabricated using nanoimprint lithographyAuthors:
Telkkälä, Jarkko; Viheriälä, Jukka; Bister, Mariia; Karinen, Jukka; Melanen, Petri; Dumitrescu, Mihail; Guina, Mircea
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| 29 |
Lasing Operation of Long-Wavelength Transistor Laser Using AGaInAs/InP Quantum Well Active RegionAuthors:
Shirao, Mizuki; Sato, Takashi; Takino, Yuta; Sato, Noriaki; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa
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| 30 |
Thermal Dissipation In InP Based Optical Lasers and AmplifiersAuthors:
Jacquet, Joël; Faugeron, Mickael; Faugeron, Mickael; Abner, Yannick; Choffla, Manish; Dijk, Frédéric Van; Brenot, Romain
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| 31 |
The optoelectronic performance of axial and radial GaAs nanowire pn-diodesAuthors:
Lysov, A.; Gutsche, C.; Offer, M.; Regolin, I.; Prost, W.; Tegude, F.-J.
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| 32 |
Optical properties of wurtzite InAs/lnP core-shell nanowires grown on silicon substratesAuthors:
Khmissi, H.; Khmissi, H.; Alouane, M. H. Hadj; Alouane, M. H. Hadj; Chauvin, N.; Naji, K.; Patriarche, G.; Ilahi, B.; Maaref, H.; Bru-Chevallier, C.; Gendry, M.
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| 33 |
Positioned Growth and Spectroscopy of InP Nanowires Containing Single InAsP Quantum DotsAuthors:
Poole, P. J.; Dalacu, D.; Lapointe, J.; Mnaymneh, K.; Wu, X.
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| 34 |
MOVPE Growth and Optical Properties of Wurtzite InP Nanowires with Radial InP/InAsP Quantum WellsAuthors:
Kawaguchi, Kenichi; Kawaguchi, Kenichi; Heurlin, Magnus; Lindgren, David; Borgström, Magnus T.; Samuelson, Lars
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| 35 |
High-Speed InP-HEMTs: Low-Noise Performance and Cryogenic OperationAuthors:
Endoh, Akira; Endoh, Akira; Watanabe, Issei; Mimura, Takashi; Mimura, Takashi; Matsui, Toshiaki
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| 36 |
20 nm Metamorphic HEMT with 660 GHz FTAuthors:
Leuther, A.; Koch, S.; Tessmann, A.; Kallfass, I.; Merkle, T.; Massler, H.; Loesch, R.; Schlechtweg, M.; Saito, S.; Ambacher, O.
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| 37 |
Injection Velocity in Thin-Channel InAs HEMTsAuthors:
Kim, Tae-Woo; Alamo, Jesús A. del
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| 38 |
Noise Properties of Asymmetrically Recessed InP-based HEMTs for Low-noise AmplifiersAuthors:
Takahashi, T.; Sato, M.; Makiyama, K.; Nakasha, Y.; Hirose, T.; Hara, N.
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| 39 |
Ultra-Low Noise InP pHEMTs for Cryogenic Deep-Space and Radio- Astronomy ApplicationsAuthors:
Alt, A. R.; Bolognesi, C. R.; Gallego, J. D.; Diez, C.; Lopez-Fernandez, I.; Barcia, A.
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| 40 |
III-V CMOS: What have we learned from HEMTs?Authors:
Alamo, Jesús A. del; Kim, Dae-Hyun; Kim, Dae-Hyun; Kim, Tae-Woo; Jin, Donghyun; Antoniadis, Dimitri A.
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| 41 |
InGaAs MOS-HEMTs on Si Substrates Grown by MOCVDAuthors:
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May
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| 42 |
Self-aligned Metal S/D InP MOSFETs using Metallic Ni-InP alloysAuthors:
Kim, S. H.; Yokoyama, M.; Taoka, N.; Iida, R.; Lee, S.; Nakane, R.; Urabe, Y.; Miyata, N.; Yasuda, T.; Yamada, H.; Fukuhara, N.; Hata, M.; Takenaka, M.; Takagi, S.
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| 43 |
Reduction of source parasitic capacitance in vertical InGaAs MISFETAuthors:
Matsumoto, Yutaka; Saito, Hisashi; Miyamoto, Yasuyuki
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| 44 |
Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTsAuthors:
Morassi, Luca; Verzellesi, Giovanni; Larcher, Luca; Zhao, Han; Lee, Jack C.
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| 45 |
On-chip Laser with Multimode Interference Reflectors Realized in a Generic Integration PlatformAuthors:
Zhao, J.; Kleijn, E.; Williams, P. J.; Smit, M. K.; Leijtens, X. J. M.
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| 46 |
Low-power Consumption and High-eye-margin 10 Gbit/s Operation of Distributed Reflector Laser with Wirelike Active RegionsAuthors:
Takahashi, Daisuke; Lee, Seunghun; Shindo, Takahiko; Shinno, Keisuke; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa
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| 47 |
Lateral Current Injection Distributed Feedback Laser with Wirelike Active RegionsAuthors:
Shindo, Takahiko; Okumura, Tadashi; Futami, Mitsuaki; Osabe, Ryo; Ito, Hitomi; Koguchi, Takayuki; Amemiya, Tomohiro; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa
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| 48 |
High-speed directly-modulated lasers with photon-photon resonanceAuthors:
Dumitrescu, M.; Telkkälä, J.; Karinen, J.; Viheriälä, J.; Laakso, A.; Afzal, S.; Reithmaier, J.-P.; Kamp, M.; Melanen, P.; Uusimaa, P.; Greadye, D.; Eisenstein, G.
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| 49 |
A cost-effective thermal managed high output power VECSEL with hybrid mirror on Copper substrate at 1,55micrometerAuthors:
Zhao, Z.; Ferlazzo, L.; Decobert, J.; Harmand, J. L.; Oudar, J. L.; Bouchoule, S.
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| 50 |
Integration of III/V lattice-matched on (001) Silicon for optoelectronicAuthors:
Kunert, Bemardette; Volz, Kerstin; Stolz, Wolfgang
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| 51 |
MOVPE preparation and in situ spectroscopy of Si(100) substrates for III-V heteroepitaxyAuthors:
Bruckner, Sebastian; Döscher, Henning; Dobrich, Anja; Supplie, Oliver; Kleinschmidt, Peter; Hannappel, Thomas
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| 52 |
Measurement of the Interface Specific Resistivity of a Heavily Doped n-Type InP/GaInAs HeterostructureAuthors:
Halevy, Ran; Cohen, Shimon; Gavrilov, Arkadi; Ritter, Dan
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| 53 |
Time Resolved Measurement of Interface and Bulk Recombination of Solar Cell MaterialsAuthors:
Szabó, Nadine; Schwarzburg, Klaus; Dobrich, Anja; Hannappel, Thomas
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| 54 |
Regrowth-Free Multi-Guide Vertical Integration in InP for Optical CommunicationsAuthors:
Tolstikhin, Valery
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| 55 |
A Generic InP-based Photonic Integration TechnologyAuthors:
Ambrosius, H. P. M. M.; Leijtens, X. J. M.; Vries, T. de; Bolk, J.; Smalbrugge, E.; Smit, M. K.
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| 56 |
Performance of InP-Based 90deg-Hybrids QPSK Receivers within C-BandAuthors:
Zhang, R.-Y.; Janiak, K.; Bach, H.-G.; Kunkel, R.; Seeger, A.; Schubert, S.; Schell, M.; Matiss, A.; Umbach, A.
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| 57 |
Two-bandgap semiconductor optical amplifier integrated using quantum well intermixingAuthors:
Lee, Ko-Hsin; Webb, Roderick P.; Webb, Roderick P.; Manning, Robert J.; Manning, Robert J.; Roycroft, Brendan; O’Callaghan, James; Peters, Frank H.; Peters, Frank H.; Corbett, Brian
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| 58 |
In situ characterization of III-V/Si(100) anti-phase disorderAuthors:
Doscher, Henning; Supplie, Oliver; Bruckner, Sebastian; Hannappel, Thomas
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| 59 |
Scanning tunneling microscopy and spectroscopy of InAsP/InP(001) quantum dotsAuthors:
Fain, Bruno; Girard, J. C.; David, C.; Patriarche, G.; Largeau, L.; Beveratos, A.; Elvira, D.; Robert-Philip, I.; Beaudoin, G.; Sagnes, I.; Wang, Z. Z.
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| 60 |
Analysis and optimization by micro-beam X-ray diffraction of Al-GaInAs heterostructures obtained by Selective Area Growth for optoelectronic applicationsAuthors:
Guillamet, Ronan; Lagay, Nadine; Mocuta, Cristian; Carbone, Gerardina; Lagrée, Pierre-Yves; Decobert, Jean
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| 61 |
GaP(100) and InP(100) surface structures in the MOVPE ambientAuthors:
Döscher, H.; Möller, K.; Vogt, P.; Kleinschmidt, P.; Hannappel, T.
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| 62 |
Atomic ordering and decomposition of lattice matched InxGa1-xAsyP1-y on InP(001)Authors:
Lenz, Andrea; Eisele, Holger; Genz, Florian; Franke, Dieter; Künzel, Harald; Pohl, Udo W.; Dähne, Mario
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| 63 |
25-Gb/s Multi-channel 1.3-µm Surface-emitting LaserAuthors:
Adachi, K.; Adachi, K.; Shinoda, K.; Shinoda, K.; Kitatani, T.; Kitatani, T.; Matsuoka, Y.; Sugawara, T.; Tsuji, S.; Tsuji, S.
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| 64 |
Novel concept for a Monolithically Integrated MEMS VCSELAuthors:
Gruendl, Tobias; Nagel, Robin D.; Debernardi, Pierluigi; Geiger, Kathrin; Grasse, Christian; Hager, Thomas; Ortsiefer, Markus; Rosskopf, Jürgen; Boehm, Gerhard; Meyer, Ralf; Amann, M.-C.
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| 65 |
Waveguide AlInAs/GaInAs APD for 40Gb/s optical receiversAuthors:
Lahrichi, M.; Glastre, G.; Paret, J.-F.; Carpentier, D.; Lanteri, D.; Lagay, N.; Decobert, J.; Achouche, M.
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| 66 |
Demonstration of a 34 nm monolithic continuously tunable VCSEL at 1.55 µm combined with liquid crystalAuthors:
Castany, O.; Paranthoen, C.; Levallois, C.; Shuaib, A.; Gauthier, J. P.; Chevalier, N.; Durand, O.; Dupont, L.; Corre, A. Le
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| 67 |
Proposal and Numerical Analysis of Ultra-fast Optical Logic Devices with Integrated InAs QD-SOA and Ring ResonatoAuthors:
Matsumoto, A.; Kuwata, K.; Akahane, K.; Utaka, K.
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| 68 |
Monolithic Flip-Chip Compatible Twin-IQ Mach-Zehnder Modulators for Hybrid Assembly onto High Capacity Optical Transmitter BoardsAuthors:
Kaiser, R.; Velthaus, K. O.; Brast, T.; Maul, B.; Gruner, M.; Klein, H.; Hamacher, M.; Hoffmann, D.; Schell, M.
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| 69 |
Hybrid Photonic Integration of InP-Based Laser Diodes and Polymer PLCsAuthors:
Soares, F. M.; Zhang, Z.; Przyrembel, G.; Lauermann, M.; Moehrle, M.; Zawadzki, C.; Zittermann, B.; Keil, N.; Grote, N.
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| 70 |
All-Optical Gating Operation in Hybrid Si/III-V Mach-Zehnder InterferometerAuthors:
Shoji, Yuya; Akimoto, Ryoichi; Kintaka, Kenji; Suda, Satoshi; Kawashima, Hitoshi; Gozu, Shin-ichiro; Mozume, Teruo; Kuwatsuka, Haruhiko; Hasama, Toshifumi; Ishikawa, Hiroshi
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| 71 |
1550 nm Flip-Chip Compatible Electroabsorption-Modulated Laser with 40 Gb/s modulation capabilityAuthors:
Kreissl, Jochen; Bornholdt, Carsten; Gaertner, Tom; Moerl, Ludwig; Przyrembel, Georges; Rehbein, Wolfgang
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| 72 |
InP HBT Technology Activities in EuropeAuthors:
Konczykowska, Agnieszka
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| 73 |
Strain Effects on Performances in InAs HEMTsAuthors:
Machida, F.; Nishino, H.; Sato, J.; Watanabe, H.; Hara, S.; Fujishiro, H. I.
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| 74 |
Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTsAuthors:
Scavennec, André; Maher, Hassan; Decobert, Jean
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| 75 |
High Current Gain of Doping-Graded GaAsSb/lnP DHBTsAuthors:
Wu, Bing-Ruey; Dvorak, Martin W.; Colbus, Patrick; Low, Tom S.; D'Avanzo, Don
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| 76 |
Weak Emitter-Size Effect in InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As Double Heterojunction Bipolar TransistorsAuthors:
Chang, Che-An; Chen, Shu-Han; Chen, Shu-Han; Wang, Sheng-Yu; Chang, Chao-Min; Chyi, Jen-Inn; Chyi, Jen-Inn; Chyi, Jen-Inn
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| 77 |
Pyramidal quantum dots: a versatile playground for quantum dot design and physicsAuthors:
Pelucchi, E.; Dimastrodonato, V.; Mereni, L. O.; Juska, G.; Gocalinska, A.
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| 78 |
Long wavelength emission from nano-cone structures with embedded single InAs/InGaAlAs quantum dots grown on InP substratesAuthors:
Hermannstädter, C.; Huh, J.-H.; Huh, J.-H.; Jahan, N. A.; Jahan, N. A.; Sasakura, H.; Sasakura, H.; Suemune, I.; Suemune, I.
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| 79 |
Effect of MOVPE Growth Conditions on The Formation of Self-Organized InAs/InGaAsP/InP Quantum DotsAuthors:
Wenning, Felix; Kuenzel, Harald; Pohl, Udo W.
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| 80 |
Analysis of in situ reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: towards a comprehensive understanding of strain accumulation influence on solar cell propertiesAuthors:
Wang, Yunpeng; Wen, Yu; Sugiyama, Masakazu; Nakano, Yoshiaki
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| 81 |
Evidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performanceAuthors:
Wen, Yu; Wang, Yunpeng; Sugiyama, Masakazu; Nakano, Yoshiaki
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| 82 |
High performance InP-based Mach-Zehnder modulators for 10 to 100 Gb/s optical fiber transmission systemsAuthors:
Velthaus, K.-O.; Hamacher, M.; Gruner, M.; Brast, T.; Kaiser, R.; Prosyk, K.; Woods, I.
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| 83 |
High-yield Manufacturing of InP Dual-Port Coherent Receiver Photonic Integrated Circuits for 100G PDM-QPSK ApplicationAuthors:
Hu, Ting-Chen; Weimann, N.; Houtsma, V.; Kopf, R.; Tate, A.; Frackoviak, J.; Reyes, R.; Chen, Y. K.; Achouche, M.; Lelarge, F.
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| 84 |
4 x 4 InAlGaAs/InAlAs optical switch fabric by cascading Mach-Zehnder interferometer-type optical switches with low-power and low-polarization-dependent operationAuthors:
Ueda, Yuta; Koyama, Noriaki; Kambayashi, Kazuki; Fujimoto, Shinji; Utaka, Katsuyuki; Shiota, Takashi; Kitatani, Takeshi
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| 85 |
Performance and Reliability Investigations of Waveguide-Integrated PhotodetectorsAuthors:
Kroh, Marcel; Beling, Andreas; Trommer, Dirk; Margraf, Michael; Unterbörsch, Günter
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| 86 |
Refractive index contributions to phase shifting in InP based 30 GHz bandwidth n-i-n Mach-Zehnder ModulatorsAuthors:
O'Callaghan, James R.; Roycroft, Brendan; Guo, Wei-Hua; Lu, Q. Y.; Daunt, Chris; Daunt, Chris; Donegan, John; Peters, Frank H.; Peters, Frank H.; Corbett, Brian
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| 87 |
High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensorAuthors:
Yatskiv, R.; Grym, J.; Zdansky, K.; Piksova, K.
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| 88 |
High Speed InP/InGaAs Uni-Traveling-Carrier Photodiodes with Dipole-Doped InGaAs/InP Absorber-Collector InterfaceAuthors:
Wang, H.; Mao, S.
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| 89 |
On the remarkable morphological organization of homoepitaxial MOVPE InP filmsAuthors:
Gocalinska, A.; Manganaro, M.; Pelucchi, E.
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| 90 |
High-speed and high-power InGaAs/InP photodiodeAuthors:
Yang, Hua; Daunt, Chris; Daunt, Chris; Lee, Kohsin; Han, Wei; Gity, Farzan; Corbett, Brian; Peters, Frank H.; Peters, Frank H.
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| 91 |
Improvement of Breakdown and DC-to-Pulse Dispersion Properties in Field-Plated InGaAs-InAlAs pHEMTsAuthors:
Saguatti, Davide; Isa, Muammar Mohamad; Ian, Ka Wa; Chini, Alessandro; Verzellesi, Giovanni; Fantini, Fausto; Missous, Mohamed
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| 92 |
Structural evaluation of InGaAs/GaAsP multiple quantum wells via in-situ wafer’s curvature measurement and ex-situ X-ray diffractionAuthors:
Sodabanlu, H.; Ma, S. J.; Watanabe, K.; Sugiyama, M.; Nakano, Y.; Nakano, Y.
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| 93 |
Uniform BCB Bonding Process Toward Low Propagation Loss in GaInAsP Photonic Wire Waveguide on Si WaferAuthors:
Maeda, Yasuna; Lee, Jieun; Atsumi, Yuki; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa
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| 94 |
Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High Indium Composition Transit LayersAuthors:
Teranishi, A.; Shizuno, K.; Suzuki, S.; Asada, M.; Sugiyama, H.; Yokoyama, H.
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| 95 |
Photoluminescence peak wavelength behavior of InAs/InGaAsP/InP quantum dots structureAuthors:
Fukuda, Ayako; Esaki, Miyuki; Akimoto, Mio; Imai, Hajime
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| 96 |
Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectricAuthors:
Morassi, Luca; Verzellesi, Giovanni; Pavan, Paolo; Veksler, Dmitry; Ok, Injo; Zhao, Han; Lee, Jack C.; Bersuker, Gennadi
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| 97 |
Design Improvements for InP-Based 90deg-Hybrid OEICs for 100GE Coherent FrontendsAuthors:
Kunkel, R.; Ortega-Moñux, A.; Bach, H.-G.; Zhang, R.; Hoffmann, D.; Schmidt, D.; Schell, M.; Romero-García, S.; Molina-Fernandez, I.; Halir, R.
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| 98 |
Annealing-induced structural changes in TlInGaAsN heterostructures studied by X-ray photoelectron spectroscopyAuthors:
Kim, K. M.; Kim, W. B.; Krishnamurthy, D.; Ishimaru, M.; Kobayashi, H.; Hasegawa, S.; Asahi, H.
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| 99 |
Application of HICUM/L0 to InP DHBTs using single-transistor parameter extractionAuthors:
Nardmann, Tobias; Lehmann, Steffen; Schröter, Michael; Schröter, Michael; Driad, Rachid
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| 100 |
Single mode TEM00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrateAuthors:
Laurain, A.; Michon, A.; Garnache, A.; Beaudoin, G.; Roblin, C.; Cambril, E.; Sagnes, I.
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| 101 |
Heteroepitaxial bonding of GaInAs quantum wells on Si: a new approach towards photonic integration on Si for devices operating at 1.55micrometerAuthors:
Talneau, A.; Chouteau, D.; Mauguin, O.; Largeau, L.; Sagnes, I.; Patriarche, G.
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| 102 |
Strain Effects on Performance of AlGaInAs/InP Single Quantum Well LasersAuthors:
Sapkota, Durga Prasad; Kayastha, Madhu Sudan; Wakita, Koichi
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| 103 |
Strain control using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs structureAuthors:
Hirooka, M.; Kawashima, F.; Iwane, Y.; Saegusa, T.; Shimomura, K.
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| 104 |
High Performance Submicron RTD Design for mm-Wave Oscillator ApplicationsAuthors:
Kamgaing, A. Tchegho; Muenstermann, B.; Geitmann, R.; Benner, O.; Blekker, K.; Prost, W.; Tegude, F. J.
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| 105 |
Self-Aligned Ohmic Contact Scheme to InGaAs Using Epitaxial Ge GrowthAuthors:
Firrincieli, Andrea; Vincent, B.; Firrincieli, Andrea; Waldron, N.; Simoen, E.; Claeys, C.; Claeys, C.; Kittl, J.
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| 106 |
InP-Based Self-Aligned Internally Series-Connected RTD/HBT for Threshold Gate ICsAuthors:
Park, Jaehong; Lee, Jongwon; Lee, Jooseok; Jeong, Yongsik; Yang, Kyounghoon
|
| 107 |
GHz-level Operation of a Compact RTD-based CNN Basic CellAuthors:
Lee, Jongwon; Lee, Jooseok; Yang, Kyounghoon
|
| 108 |
100nm-gate-Iength In0.47Ga0.53As multi-gate MOSFET: fabrication and characterisationAuthors:
Mo, J. J.; Wichmann, N.; Roelens, Y.; Zaknoune, M.; Desplanque, L.; Wallart, X.; Bollaert, S.
|
| 109 |
A Compact High-Speed RTD-based Reconfigurable Logic GateAuthors:
Lee, Jooseok; Lee, Jongwon; Yang, Kyounghoon
|
| 110 |
Preliminary results of storage accelerated aging test on InP/GaAsSb DHBTAuthors:
Koné, G. A.; Ghosh, S.; Grandchamp, B.; Maneux, C.; Marc, F.; Labat, N.; Zimmer, T.; Maher, H.; Bourqui, M. L.; Smith, D.
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| 111 |
A 300 GHz InP/GaAsSb/InP HBT for high data rate applicationsAuthors:
Maher, H.; Delmouly, V.; Rouchy, U.; Renvoise, M.; Frijlink, P.; Smith, D.; Zaknoune, M.; Ducatteau, D.; Avramovic, V.; Scavennec, A.; Godin, J.; Riet, M.; Maneux, C.; Ardouin, B.
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| 112 |
Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applicationsAuthors:
Zhao, Huan; Zhao, Huan; Do, Thanh Ngoc Thi; Do, Thanh Ngoc Thi; Sobis, Peter; Sobis, Peter; Sobis, Peter; Tang, Aik-Yean; Tang, Aik-Yean; Yhland, Klas; Yhland, Klas; Stenarson, Jörgen; Stenarson, Jörgen; Stake, Jan; Stake, Jan
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| 113 |
High Output Power (~400 f..lW) Oscillators at Around 550 GHz Using Large Area RTD and Optimized Antenna StructureAuthors:
Shiraishi, M.; Shibayama, H.; Ishigaki, K.; Suzuki, S.; Asada, M.; Sugiyama, H.; Yokoyama, H.
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| 114 |
X-ray diffraction characterization of polycrystalline InP films grown by molecular-beam deposition: Estimation of stacking-fault probabilityAuthors:
Kajikawa, Y.; Iseki, Y.; Matsui, Y.
|
| 115 |
Extended X-ray absorption fine structure of InAsPSbAuthors:
Wu, Chen-Jun; Tsai, Gene; Feng, Zhe-Chuan; Lin, Hao-Hsiung; Lin, Hao-Hsiung
|
| 116 |
Single Wavelength (Non-Grating) High-Mesa Asymmetric Active-MMI All Optical Bi-Stable Laser DiodesAuthors:
Jiang, H.; Chaen, Y.; Hagio, T.; Tsuruda, K.; Jizodo, M.; Matsuo, S.; Hamamoto, K.
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| 117 |
8-channel AWG-based multiwavelength laser fabricated in a multi-project wafer runAuthors:
Lawniczuk, K.; Lawniczuk, K.; Piramidowicz, R.; Szczepanski, P.; Szczepanski, P.; Williams, P. J.; Wale, M. J.; Smit, M. K.; Leijtens, X. J. M.
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| 118 |
Nanostructuring of InP by colloidal lithography and ICP etching for photovoltaic applicationsAuthors:
Naureen, Shagufta; Rajagembu, Perumal; Sanatinia, Reza; Shahid, Naeem; Li, Mingyu; Anand, Srinivasan
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| 119 |
High quality photonic crystal waveguide filters based on mode-gap effectAuthors:
Shahid, Naeem; Naureen, Shagufta; Li, Mingyu; Swillo, Marcin; Anand, Srinivasan
|
| 120 |
Structural characterisation of GaP/Si nanolayersAuthors:
Guo, W.; Thanh, T. Nguyen; Elias, G.; Létoublon, A.; Cornet, C.; Ponchet, A.; Bondi, A.; Rohel, T.; Bertru, N.; Robert, C.; Durand, O.; Micha, J. S.; Corre, A. Le
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| 121 |
FT-DLTS studies on deep levels in InAs quantum dashes grown on InPAuthors:
Zouaoui, Mouna; Regreny, Philippe; Ajjel, Ridha; Girard, Philippe; Gendry, Michel; Bremond, Georges
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