HHI ; IAF ; VDE (Hrsg.)

23rd International Conference on Indium Phosphide and Related Materials - IPRM 2011

May 22-26, 2011, Maritim proArte Hotel, Berlin, Germany, Conference Proceedings

2011, 490 Seiten, DIN A4, kartoniert,
ISBN 978-3-8007-3356-9
Rabatt

199,00 €

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Beschreibung

IPRM 2011 continues bringing together scientists from academia and industry to share recent developments and achievements in the area of InP technology. Again optoelectronic and electronic devices including related fabrication processes, and bulk and epitaxial materials as well as nanostructures and novel materials continue to represent major subjects of the conference. In addition Photonic integration technologies have been included as a new topic to highlight the regained importance of this field which proves to be particularly specific to InP.

Dieser Tagungsband enthält folgende Beiträge, die Sie einzeln als PDF-Download erwerben können:


1	AlGaInAs based photonic devices for high-speed data transmission Autoren: Yamamoto, Tsuyoshi; Yamamoto, Tsuyoshi; Yamamoto, Tsuyoshi; Simoyama, Takasi; Simoyama, Takasi; Simoyama, Takasi; Tanaka, Shinsuke; Matsuda, Manabu; Matsuda, Manabu; Matsuda, Manabu; Uetake, Ayahito; Uetake, Ayahito; Uetake, Ayahito; Okumura, Shigekazu; Ekawa, Mitsuru; Ekawa, Mitsuru; Ekawa, Mitsuru; Morito, Ken

2	Low-Cost 25Gb/s 1300nm Electroabsorption-Modulated InGaAlAs RW-DFB-Laser Autoren: Moehrle, Martin; Przyrembel, Georges; Bornholdt, Carsten; Sigmund, Ariane; Molzow, Wolf-Dietrich; Klein, Holger

3	Low-Threshold 3 µm GaInAsSb/AlGaInAsSb Quantum-Well Lasers Operating in Continuous-Wave up to 64 °C Autoren: Vizbaras, Kristijonas; Andrejew, Alexander; Vizbaras, Augustinas; Grasse, Christian; Arafin, Shamsul; Amann, Markus-Christian

4	Narrow Linewidth 1.52 µm InAs/InP Quantum Dot DFB Lasers Autoren: Poole, P. J.; Lu, Z. G.; Liu, J. R.; Barrios, P.; Jiao, Z. J.; Poitras, D.; SpringThorpe, A. J.; Pakulski, G.; Goodchild, D.; Rioux, B.

5	Single-Wavelength InGaAs/AlAs(Sb) Quantum Cascade Lasers Autoren: Slight, Thomas; Slight, Thomas; Phelan, Richard; Revin, Dmitry; McKee, Andrew; Cockburn, John; Kelly, Brian; Ironside, Charles

6	InP HBTs for THz Frequency Integrated Circuits Autoren: Urteaga, M.; Seo, M.; Hacker, J.; Griffith, Z.; Young, A.; Pierson, R.; Rowell, P.; Skalare, A.; Jain, V.; Lobisser, E.; Rodwell, M. J. W.

7	InGaAs/InP DHBTs demonstrating simultaneous ftau/fmax ~ 460/850 GHz in a refractory emitter process Autoren: Jain, Vibhor; Lobisser, Evan; Baraskar, Ashish; Thibeault, Brian J.; Rodwell, Mark J. W.; Urteaga, M.; Loubychev, D.; Snyder, A.; Wu, Y.; Fastenau, J. M.; Liu, W. K.

8	High-Speed and Low-Power Static Frequency Divider and Decision Circuit with 0.5-?m-emitter-width InP HBTs Autoren: Bouvier, Y.; Nagatani, M.; Sano, K.; Murata, K.; Kurishima, K.; Ida, M.

9	InP Lattice-matched HEMT with Regrown Source/Drain by MOCVD Autoren: Li, Qiang; Li, Ming; Tang, Chak Wah; Lau, Kei May

10	Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition Autoren: Schleeh, J.; Halonen, J.; Nilsson, B.; Nilsson, P. Å.; Zeng, L. J.; Ramvall, P.; Wadefalk, N.; Zirath, H.; Olsson, E.; Grahn, J.

11	Metal-cavity Nanolasers - Theory and Experiment Autoren: Chuang, Shun Lien; Lu, Chien-Yao; Chang, Shu-Wei; Germann, Tim D.; Pohl, Udo W.; Bimberg, Dieter

12	High repetition rate two-section InAs/InP Quantum-Dash Passively Mode Locked Lasers Autoren: Rosales, R.; Merghem, K.; Martinez, A.; Accard, A.; Lelarge, F.; Ramdane, A.

13	Improvement of modal gain of InAs/InP Quantum-Dash Lasers Autoren: Merghem, K.; Rosales, R.; Martinez, A.; Patriarche, G.; Ramdane, A.; Chimot, N.; Dijk, F. van; Moustapha-Rabault, Y.; Poingt, F.; Lelarge, F.

14	InAs/InGaAsP Quantum Dots Emitting at 1.5 µm for Applications in Lasers Autoren: Semenova, E. S.; Kulkova, I. V.; Kadkhodazadeh, S.; Kadkhodazadeh, S.; Schubert, M.; Dunin-Borkowski, R. E.; Yvind, K.

15	Current-injected Quantum-dot Microdisk Lasers Operating at Room Temperature Autoren: Mao, M.-H.; Chien, H. C.; Hong, J. Z.

16	III-V on Silicon for High-Speed Electronics and CMOS Photonics Autoren: Takenaka, Mitsuru; Takagi, Shinichi

17	ALD Al2O3 Activated Direct Wafer Bonding for III-V CMOS Photonics Platform Autoren: Ikku, Y.; Yokoyama, M.; Iida, R.; Sugiyama, M.; Nakano, Y.; Takenaka, M.; Takagi, S.

18	Optimisation of seed and mask surfaces in epitaxial lateral overgrowth of indium phosphide on silicon for silicon photonics Autoren: Junesand, Carl; Hu, Chen; Wang, Zhechao; Metaferia, Wondwosen; Lourdudoss, Sebastian

19	Carrier Injection in GaAsPN/GaPN Quantum Wells on Silicon Autoren: Cornet, C.; Robert, C.; Thanh, T. Nguyen; Guo, W.; Bondi, A.; Elias, G.; Létoublon, A.; Richard, S.; Burin, J.-P.; Perrin, M.; Jancu, J.-M.; Durand, O.; Even, J.; Loualiche, S.; Folliot, H.; Bertru, N.; Ponchet, A.; Corre, A. Le

20	Electrical Pumping Febry-Perot Lasing of III-V Layer On Highly Doped Silicon Micro Rib by Plasma Assisted Direct Bonding Autoren: Li, Linghan; Takigawa, Ryo; Higo, Akio; Higurashi, Eiji; Sugiyama, Masakazu; Nakano, Yoshiaki

21	Metamorphic and Non-conventional 'Buffer' Layers Autoren: Kuech, T. F.; Jha, S.; Wiedmann, M. K.; Paulson, C. A.; Babcock, S. E.; Kuan, T. S.; Mawst, L. J.; Kirch, J.; Kimd, Tae Wan

22	Metamorphic Te-doped Al0.4In0.6Sb/Ga0.4In0.6Sb HEMT structures for low power and high frequency applications Autoren: Loesch, R.

23	Characteristics of Step-Graded InxGa1-xAs and InGaPySb1-y Metamorphic Buffer Layers on GaAs Substrates Autoren: Kirch, J.; Dudley, P.; Kim, T.; Radavich, K.; Ruder, S.; Mawst, L. J.; Kuech, T. F.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.

24	Structural evaluation of GaAs1-xBix mixed crystals by TEM Autoren: Ueda, Osamu; Tominaga, Yoriko; Ikenaga, Noriaki; Yoshimoto, Masahiro; Oe, Kunishige

25	Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxy Autoren: Tawil, S. N. M.; Zhou, Y. K.; Krishnamurthy, D.; Emura, S.; Hasegawa, S.; Asahi, H.

26	Nanoimprint lithography for photonic devices Autoren: Niemi, Tapio

27	80deg C Continuous Wave Operation of Photonic-Crystal Nanocavity Lasers Autoren: Takeda, Koji; Sato, Tomonari; Shinya, Akihiko; Nozaki, Kengo; Chen, Chin-Hui; Kawaguchi, Yoshihiro; Taniyama, Hideaki; Notomi, Masaya; Matsuo, Shinji

28	Narrow linewidth 1.55 µm laterally-coupled DFB lasers fabricated using nanoimprint lithography Autoren: Telkkälä, Jarkko; Viheriälä, Jukka; Bister, Mariia; Karinen, Jukka; Melanen, Petri; Dumitrescu, Mihail; Guina, Mircea

29	Lasing Operation of Long-Wavelength Transistor Laser Using AGaInAs/InP Quantum Well Active Region Autoren: Shirao, Mizuki; Sato, Takashi; Takino, Yuta; Sato, Noriaki; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa

30	Thermal Dissipation In InP Based Optical Lasers and Amplifiers Autoren: Jacquet, Joël; Faugeron, Mickael; Faugeron, Mickael; Abner, Yannick; Choffla, Manish; Dijk, Frédéric Van; Brenot, Romain

31	The optoelectronic performance of axial and radial GaAs nanowire pn-diodes Autoren: Lysov, A.; Gutsche, C.; Offer, M.; Regolin, I.; Prost, W.; Tegude, F.-J.

32	Optical properties of wurtzite InAs/lnP core-shell nanowires grown on silicon substrates Autoren: Khmissi, H.; Khmissi, H.; Alouane, M. H. Hadj; Alouane, M. H. Hadj; Chauvin, N.; Naji, K.; Patriarche, G.; Ilahi, B.; Maaref, H.; Bru-Chevallier, C.; Gendry, M.

33	Positioned Growth and Spectroscopy of InP Nanowires Containing Single InAsP Quantum Dots Autoren: Poole, P. J.; Dalacu, D.; Lapointe, J.; Mnaymneh, K.; Wu, X.

34	MOVPE Growth and Optical Properties of Wurtzite InP Nanowires with Radial InP/InAsP Quantum Wells Autoren: Kawaguchi, Kenichi; Kawaguchi, Kenichi; Heurlin, Magnus; Lindgren, David; Borgström, Magnus T.; Samuelson, Lars

35	High-Speed InP-HEMTs: Low-Noise Performance and Cryogenic Operation Autoren: Endoh, Akira; Endoh, Akira; Watanabe, Issei; Mimura, Takashi; Mimura, Takashi; Matsui, Toshiaki

36	20 nm Metamorphic HEMT with 660 GHz FT Autoren: Leuther, A.; Koch, S.; Tessmann, A.; Kallfass, I.; Merkle, T.; Massler, H.; Loesch, R.; Schlechtweg, M.; Saito, S.; Ambacher, O.

37	Injection Velocity in Thin-Channel InAs HEMTs Autoren: Kim, Tae-Woo; Alamo, Jesús A. del

38	Noise Properties of Asymmetrically Recessed InP-based HEMTs for Low-noise Amplifiers Autoren: Takahashi, T.; Sato, M.; Makiyama, K.; Nakasha, Y.; Hirose, T.; Hara, N.

39	Ultra-Low Noise InP pHEMTs for Cryogenic Deep-Space and Radio- Astronomy Applications Autoren: Alt, A. R.; Bolognesi, C. R.; Gallego, J. D.; Diez, C.; Lopez-Fernandez, I.; Barcia, A.

40	III-V CMOS: What have we learned from HEMTs? Autoren: Alamo, Jesús A. del; Kim, Dae-Hyun; Kim, Dae-Hyun; Kim, Tae-Woo; Jin, Donghyun; Antoniadis, Dimitri A.

41	InGaAs MOS-HEMTs on Si Substrates Grown by MOCVD Autoren: Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May

42	Self-aligned Metal S/D InP MOSFETs using Metallic Ni-InP alloys Autoren: Kim, S. H.; Yokoyama, M.; Taoka, N.; Iida, R.; Lee, S.; Nakane, R.; Urabe, Y.; Miyata, N.; Yasuda, T.; Yamada, H.; Fukuhara, N.; Hata, M.; Takenaka, M.; Takagi, S.

43	Reduction of source parasitic capacitance in vertical InGaAs MISFET Autoren: Matsumoto, Yutaka; Saito, Hisashi; Miyamoto, Yasuyuki

44	Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs Autoren: Morassi, Luca; Verzellesi, Giovanni; Larcher, Luca; Zhao, Han; Lee, Jack C.

45	On-chip Laser with Multimode Interference Reflectors Realized in a Generic Integration Platform Autoren: Zhao, J.; Kleijn, E.; Williams, P. J.; Smit, M. K.; Leijtens, X. J. M.

46	Low-power Consumption and High-eye-margin 10 Gbit/s Operation of Distributed Reflector Laser with Wirelike Active Regions Autoren: Takahashi, Daisuke; Lee, Seunghun; Shindo, Takahiko; Shinno, Keisuke; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa

47	Lateral Current Injection Distributed Feedback Laser with Wirelike Active Regions Autoren: Shindo, Takahiko; Okumura, Tadashi; Futami, Mitsuaki; Osabe, Ryo; Ito, Hitomi; Koguchi, Takayuki; Amemiya, Tomohiro; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa

48	High-speed directly-modulated lasers with photon-photon resonance Autoren: Dumitrescu, M.; Telkkälä, J.; Karinen, J.; Viheriälä, J.; Laakso, A.; Afzal, S.; Reithmaier, J.-P.; Kamp, M.; Melanen, P.; Uusimaa, P.; Greadye, D.; Eisenstein, G.

49	A cost-effective thermal managed high output power VECSEL with hybrid mirror on Copper substrate at 1,55micrometer Autoren: Zhao, Z.; Ferlazzo, L.; Decobert, J.; Harmand, J. L.; Oudar, J. L.; Bouchoule, S.

50	Integration of III/V lattice-matched on (001) Silicon for optoelectronic Autoren: Kunert, Bemardette; Volz, Kerstin; Stolz, Wolfgang

51	MOVPE preparation and in situ spectroscopy of Si(100) substrates for III-V heteroepitaxy Autoren: Bruckner, Sebastian; Döscher, Henning; Dobrich, Anja; Supplie, Oliver; Kleinschmidt, Peter; Hannappel, Thomas

52	Measurement of the Interface Specific Resistivity of a Heavily Doped n-Type InP/GaInAs Heterostructure Autoren: Halevy, Ran; Cohen, Shimon; Gavrilov, Arkadi; Ritter, Dan

53	Time Resolved Measurement of Interface and Bulk Recombination of Solar Cell Materials Autoren: Szabó, Nadine; Schwarzburg, Klaus; Dobrich, Anja; Hannappel, Thomas

54	Regrowth-Free Multi-Guide Vertical Integration in InP for Optical Communications Autoren: Tolstikhin, Valery

55	A Generic InP-based Photonic Integration Technology Autoren: Ambrosius, H. P. M. M.; Leijtens, X. J. M.; Vries, T. de; Bolk, J.; Smalbrugge, E.; Smit, M. K.

56	Performance of InP-Based 90deg-Hybrids QPSK Receivers within C-Band Autoren: Zhang, R.-Y.; Janiak, K.; Bach, H.-G.; Kunkel, R.; Seeger, A.; Schubert, S.; Schell, M.; Matiss, A.; Umbach, A.

57	Two-bandgap semiconductor optical amplifier integrated using quantum well intermixing Autoren: Lee, Ko-Hsin; Webb, Roderick P.; Webb, Roderick P.; Manning, Robert J.; Manning, Robert J.; Roycroft, Brendan; O’Callaghan, James; Peters, Frank H.; Peters, Frank H.; Corbett, Brian

58	In situ characterization of III-V/Si(100) anti-phase disorder Autoren: Doscher, Henning; Supplie, Oliver; Bruckner, Sebastian; Hannappel, Thomas

59	Scanning tunneling microscopy and spectroscopy of InAsP/InP(001) quantum dots Autoren: Fain, Bruno; Girard, J. C.; David, C.; Patriarche, G.; Largeau, L.; Beveratos, A.; Elvira, D.; Robert-Philip, I.; Beaudoin, G.; Sagnes, I.; Wang, Z. Z.

60	Analysis and optimization by micro-beam X-ray diffraction of Al-GaInAs heterostructures obtained by Selective Area Growth for optoelectronic applications Autoren: Guillamet, Ronan; Lagay, Nadine; Mocuta, Cristian; Carbone, Gerardina; Lagrée, Pierre-Yves; Decobert, Jean

61	GaP(100) and InP(100) surface structures in the MOVPE ambient Autoren: Döscher, H.; Möller, K.; Vogt, P.; Kleinschmidt, P.; Hannappel, T.

62	Atomic ordering and decomposition of lattice matched InxGa1-xAsyP1-y on InP(001) Autoren: Lenz, Andrea; Eisele, Holger; Genz, Florian; Franke, Dieter; Künzel, Harald; Pohl, Udo W.; Dähne, Mario

63	25-Gb/s Multi-channel 1.3-µm Surface-emitting Laser Autoren: Adachi, K.; Adachi, K.; Shinoda, K.; Shinoda, K.; Kitatani, T.; Kitatani, T.; Matsuoka, Y.; Sugawara, T.; Tsuji, S.; Tsuji, S.

64	Novel concept for a Monolithically Integrated MEMS VCSEL Autoren: Gruendl, Tobias; Nagel, Robin D.; Debernardi, Pierluigi; Geiger, Kathrin; Grasse, Christian; Hager, Thomas; Ortsiefer, Markus; Rosskopf, Jürgen; Boehm, Gerhard; Meyer, Ralf; Amann, M.-C.

65	Waveguide AlInAs/GaInAs APD for 40Gb/s optical receivers Autoren: Lahrichi, M.; Glastre, G.; Paret, J.-F.; Carpentier, D.; Lanteri, D.; Lagay, N.; Decobert, J.; Achouche, M.

66	Demonstration of a 34 nm monolithic continuously tunable VCSEL at 1.55 µm combined with liquid crystal Autoren: Castany, O.; Paranthoen, C.; Levallois, C.; Shuaib, A.; Gauthier, J. P.; Chevalier, N.; Durand, O.; Dupont, L.; Corre, A. Le

67	Proposal and Numerical Analysis of Ultra-fast Optical Logic Devices with Integrated InAs QD-SOA and Ring Resonato Autoren: Matsumoto, A.; Kuwata, K.; Akahane, K.; Utaka, K.

68	Monolithic Flip-Chip Compatible Twin-IQ Mach-Zehnder Modulators for Hybrid Assembly onto High Capacity Optical Transmitter Boards Autoren: Kaiser, R.; Velthaus, K. O.; Brast, T.; Maul, B.; Gruner, M.; Klein, H.; Hamacher, M.; Hoffmann, D.; Schell, M.

69	Hybrid Photonic Integration of InP-Based Laser Diodes and Polymer PLCs Autoren: Soares, F. M.; Zhang, Z.; Przyrembel, G.; Lauermann, M.; Moehrle, M.; Zawadzki, C.; Zittermann, B.; Keil, N.; Grote, N.

70	All-Optical Gating Operation in Hybrid Si/III-V Mach-Zehnder Interferometer Autoren: Shoji, Yuya; Akimoto, Ryoichi; Kintaka, Kenji; Suda, Satoshi; Kawashima, Hitoshi; Gozu, Shin-ichiro; Mozume, Teruo; Kuwatsuka, Haruhiko; Hasama, Toshifumi; Ishikawa, Hiroshi

71	1550 nm Flip-Chip Compatible Electroabsorption-Modulated Laser with 40 Gb/s modulation capability Autoren: Kreissl, Jochen; Bornholdt, Carsten; Gaertner, Tom; Moerl, Ludwig; Przyrembel, Georges; Rehbein, Wolfgang

72	InP HBT Technology Activities in Europe Autoren: Konczykowska, Agnieszka

73	Strain Effects on Performances in InAs HEMTs Autoren: Machida, F.; Nishino, H.; Sato, J.; Watanabe, H.; Hara, S.; Fujishiro, H. I.

74	Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTs Autoren: Scavennec, André; Maher, Hassan; Decobert, Jean

75	High Current Gain of Doping-Graded GaAsSb/lnP DHBTs Autoren: Wu, Bing-Ruey; Dvorak, Martin W.; Colbus, Patrick; Low, Tom S.; D'Avanzo, Don

76	Weak Emitter-Size Effect in InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As Double Heterojunction Bipolar Transistors Autoren: Chang, Che-An; Chen, Shu-Han; Chen, Shu-Han; Wang, Sheng-Yu; Chang, Chao-Min; Chyi, Jen-Inn; Chyi, Jen-Inn; Chyi, Jen-Inn

77	Pyramidal quantum dots: a versatile playground for quantum dot design and physics Autoren: Pelucchi, E.; Dimastrodonato, V.; Mereni, L. O.; Juska, G.; Gocalinska, A.

78	Long wavelength emission from nano-cone structures with embedded single InAs/InGaAlAs quantum dots grown on InP substrates Autoren: Hermannstädter, C.; Huh, J.-H.; Huh, J.-H.; Jahan, N. A.; Jahan, N. A.; Sasakura, H.; Sasakura, H.; Suemune, I.; Suemune, I.

79	Effect of MOVPE Growth Conditions on The Formation of Self-Organized InAs/InGaAsP/InP Quantum Dots Autoren: Wenning, Felix; Kuenzel, Harald; Pohl, Udo W.

80	Analysis of in situ reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: towards a comprehensive understanding of strain accumulation influence on solar cell properties Autoren: Wang, Yunpeng; Wen, Yu; Sugiyama, Masakazu; Nakano, Yoshiaki

81	Evidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performance Autoren: Wen, Yu; Wang, Yunpeng; Sugiyama, Masakazu; Nakano, Yoshiaki

82	High performance InP-based Mach-Zehnder modulators for 10 to 100 Gb/s optical fiber transmission systems Autoren: Velthaus, K.-O.; Hamacher, M.; Gruner, M.; Brast, T.; Kaiser, R.; Prosyk, K.; Woods, I.

83	High-yield Manufacturing of InP Dual-Port Coherent Receiver Photonic Integrated Circuits for 100G PDM-QPSK Application Autoren: Hu, Ting-Chen; Weimann, N.; Houtsma, V.; Kopf, R.; Tate, A.; Frackoviak, J.; Reyes, R.; Chen, Y. K.; Achouche, M.; Lelarge, F.

84	4 x 4 InAlGaAs/InAlAs optical switch fabric by cascading Mach-Zehnder interferometer-type optical switches with low-power and low-polarization-dependent operation Autoren: Ueda, Yuta; Koyama, Noriaki; Kambayashi, Kazuki; Fujimoto, Shinji; Utaka, Katsuyuki; Shiota, Takashi; Kitatani, Takeshi

85	Performance and Reliability Investigations of Waveguide-Integrated Photodetectors Autoren: Kroh, Marcel; Beling, Andreas; Trommer, Dirk; Margraf, Michael; Unterbörsch, Günter

86	Refractive index contributions to phase shifting in InP based 30 GHz bandwidth n-i-n Mach-Zehnder Modulators Autoren: O'Callaghan, James R.; Roycroft, Brendan; Guo, Wei-Hua; Lu, Q. Y.; Daunt, Chris; Daunt, Chris; Donegan, John; Peters, Frank H.; Peters, Frank H.; Corbett, Brian

87	High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor Autoren: Yatskiv, R.; Grym, J.; Zdansky, K.; Piksova, K.

88	High Speed InP/InGaAs Uni-Traveling-Carrier Photodiodes with Dipole-Doped InGaAs/InP Absorber-Collector Interface Autoren: Wang, H.; Mao, S.

89	On the remarkable morphological organization of homoepitaxial MOVPE InP films Autoren: Gocalinska, A.; Manganaro, M.; Pelucchi, E.

90	High-speed and high-power InGaAs/InP photodiode Autoren: Yang, Hua; Daunt, Chris; Daunt, Chris; Lee, Kohsin; Han, Wei; Gity, Farzan; Corbett, Brian; Peters, Frank H.; Peters, Frank H.

91	Improvement of Breakdown and DC-to-Pulse Dispersion Properties in Field-Plated InGaAs-InAlAs pHEMTs Autoren: Saguatti, Davide; Isa, Muammar Mohamad; Ian, Ka Wa; Chini, Alessandro; Verzellesi, Giovanni; Fantini, Fausto; Missous, Mohamed

92	Structural evaluation of InGaAs/GaAsP multiple quantum wells via in-situ wafer’s curvature measurement and ex-situ X-ray diffraction Autoren: Sodabanlu, H.; Ma, S. J.; Watanabe, K.; Sugiyama, M.; Nakano, Y.; Nakano, Y.

93	Uniform BCB Bonding Process Toward Low Propagation Loss in GaInAsP Photonic Wire Waveguide on Si Wafer Autoren: Maeda, Yasuna; Lee, Jieun; Atsumi, Yuki; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa

94	Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High Indium Composition Transit Layers Autoren: Teranishi, A.; Shizuno, K.; Suzuki, S.; Asada, M.; Sugiyama, H.; Yokoyama, H.

95	Photoluminescence peak wavelength behavior of InAs/InGaAsP/InP quantum dots structure Autoren: Fukuda, Ayako; Esaki, Miyuki; Akimoto, Mio; Imai, Hajime

96	Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric Autoren: Morassi, Luca; Verzellesi, Giovanni; Pavan, Paolo; Veksler, Dmitry; Ok, Injo; Zhao, Han; Lee, Jack C.; Bersuker, Gennadi

97	Design Improvements for InP-Based 90deg-Hybrid OEICs for 100GE Coherent Frontends Autoren: Kunkel, R.; Ortega-Moñux, A.; Bach, H.-G.; Zhang, R.; Hoffmann, D.; Schmidt, D.; Schell, M.; Romero-García, S.; Molina-Fernandez, I.; Halir, R.

98	Annealing-induced structural changes in TlInGaAsN heterostructures studied by X-ray photoelectron spectroscopy Autoren: Kim, K. M.; Kim, W. B.; Krishnamurthy, D.; Ishimaru, M.; Kobayashi, H.; Hasegawa, S.; Asahi, H.

99	Application of HICUM/L0 to InP DHBTs using single-transistor parameter extraction Autoren: Nardmann, Tobias; Lehmann, Steffen; Schröter, Michael; Schröter, Michael; Driad, Rachid

100	Single mode TEM00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate Autoren: Laurain, A.; Michon, A.; Garnache, A.; Beaudoin, G.; Roblin, C.; Cambril, E.; Sagnes, I.

101	Heteroepitaxial bonding of GaInAs quantum wells on Si: a new approach towards photonic integration on Si for devices operating at 1.55micrometer Autoren: Talneau, A.; Chouteau, D.; Mauguin, O.; Largeau, L.; Sagnes, I.; Patriarche, G.

102	Strain Effects on Performance of AlGaInAs/InP Single Quantum Well Lasers Autoren: Sapkota, Durga Prasad; Kayastha, Madhu Sudan; Wakita, Koichi

103	Strain control using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs structure Autoren: Hirooka, M.; Kawashima, F.; Iwane, Y.; Saegusa, T.; Shimomura, K.

104	High Performance Submicron RTD Design for mm-Wave Oscillator Applications Autoren: Kamgaing, A. Tchegho; Muenstermann, B.; Geitmann, R.; Benner, O.; Blekker, K.; Prost, W.; Tegude, F. J.

105	Self-Aligned Ohmic Contact Scheme to InGaAs Using Epitaxial Ge Growth Autoren: Firrincieli, Andrea; Vincent, B.; Firrincieli, Andrea; Waldron, N.; Simoen, E.; Claeys, C.; Claeys, C.; Kittl, J.

106	InP-Based Self-Aligned Internally Series-Connected RTD/HBT for Threshold Gate ICs Autoren: Park, Jaehong; Lee, Jongwon; Lee, Jooseok; Jeong, Yongsik; Yang, Kyounghoon

107	GHz-level Operation of a Compact RTD-based CNN Basic Cell Autoren: Lee, Jongwon; Lee, Jooseok; Yang, Kyounghoon

108	100nm-gate-Iength In0.47Ga0.53As multi-gate MOSFET: fabrication and characterisation Autoren: Mo, J. J.; Wichmann, N.; Roelens, Y.; Zaknoune, M.; Desplanque, L.; Wallart, X.; Bollaert, S.

109	A Compact High-Speed RTD-based Reconfigurable Logic Gate Autoren: Lee, Jooseok; Lee, Jongwon; Yang, Kyounghoon

110	Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT Autoren: Koné, G. A.; Ghosh, S.; Grandchamp, B.; Maneux, C.; Marc, F.; Labat, N.; Zimmer, T.; Maher, H.; Bourqui, M. L.; Smith, D.

111	A 300 GHz InP/GaAsSb/InP HBT for high data rate applications Autoren: Maher, H.; Delmouly, V.; Rouchy, U.; Renvoise, M.; Frijlink, P.; Smith, D.; Zaknoune, M.; Ducatteau, D.; Avramovic, V.; Scavennec, A.; Godin, J.; Riet, M.; Maneux, C.; Ardouin, B.

112	Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applications Autoren: Zhao, Huan; Zhao, Huan; Do, Thanh Ngoc Thi; Do, Thanh Ngoc Thi; Sobis, Peter; Sobis, Peter; Sobis, Peter; Tang, Aik-Yean; Tang, Aik-Yean; Yhland, Klas; Yhland, Klas; Stenarson, Jörgen; Stenarson, Jörgen; Stake, Jan; Stake, Jan

113	High Output Power (~400 f..lW) Oscillators at Around 550 GHz Using Large Area RTD and Optimized Antenna Structure Autoren: Shiraishi, M.; Shibayama, H.; Ishigaki, K.; Suzuki, S.; Asada, M.; Sugiyama, H.; Yokoyama, H.

114	X-ray diffraction characterization of polycrystalline InP films grown by molecular-beam deposition: Estimation of stacking-fault probability Autoren: Kajikawa, Y.; Iseki, Y.; Matsui, Y.

115	Extended X-ray absorption fine structure of InAsPSb Autoren: Wu, Chen-Jun; Tsai, Gene; Feng, Zhe-Chuan; Lin, Hao-Hsiung; Lin, Hao-Hsiung

116	Single Wavelength (Non-Grating) High-Mesa Asymmetric Active-MMI All Optical Bi-Stable Laser Diodes Autoren: Jiang, H.; Chaen, Y.; Hagio, T.; Tsuruda, K.; Jizodo, M.; Matsuo, S.; Hamamoto, K.

117	8-channel AWG-based multiwavelength laser fabricated in a multi-project wafer run Autoren: Lawniczuk, K.; Lawniczuk, K.; Piramidowicz, R.; Szczepanski, P.; Szczepanski, P.; Williams, P. J.; Wale, M. J.; Smit, M. K.; Leijtens, X. J. M.

118	Nanostructuring of InP by colloidal lithography and ICP etching for photovoltaic applications Autoren: Naureen, Shagufta; Rajagembu, Perumal; Sanatinia, Reza; Shahid, Naeem; Li, Mingyu; Anand, Srinivasan

119	High quality photonic crystal waveguide filters based on mode-gap effect Autoren: Shahid, Naeem; Naureen, Shagufta; Li, Mingyu; Swillo, Marcin; Anand, Srinivasan

120	Structural characterisation of GaP/Si nanolayers Autoren: Guo, W.; Thanh, T. Nguyen; Elias, G.; Létoublon, A.; Cornet, C.; Ponchet, A.; Bondi, A.; Rohel, T.; Bertru, N.; Robert, C.; Durand, O.; Micha, J. S.; Corre, A. Le

121	FT-DLTS studies on deep levels in InAs quantum dashes grown on InP Autoren: Zouaoui, Mouna; Regreny, Philippe; Ajjel, Ridha; Girard, Philippe; Gendry, Michel; Bremond, Georges

HHI ; IAF ; VDE (Hrsg.)

23rd International Conference on Indium Phosphide and Related Materials - IPRM 2011

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