|
Rubrik:
GMM-Fachberichte
|
||||
Lectures held at the GMM-Conference January 23-26, 2006 in Dresden, Germany GMM-Fachbericht Band 49
2006, 352 Seiten, DIN A4, kartoniert, |
|
|||
|
|
| 1 |
Mask Costs, A New LookAutoren:
Grenon, Brian J.; Hector, Scott
|
| 2 |
The Status of LEEPL: Can it be an alternative solution?Autoren:
Utsumi, Takao
|
| 3 |
Evaluation of quartz dry etching profile for the PSM lithography performanceAutoren:
Komizo, Toru; Nemoto, Satoru; Kojima, Yosuke; Ohshima, Takashi; Yoshii, Takashi; Konishi, Toshio; Chiba, Kazuaki; Kikuchi, Yasutaka; Otaki, Masao; Okuda, Yoshimitsu
|
| 4 |
Multi-Project Reticle Design andWafer Dicing under Uncertain DemandAutoren:
Kahng, Andrew B.; Mandoiu, Ion; Xu, Xu; Zelikovsky, Alex Z.
|
| 5 |
Mask Industry Assessment Trend AnalysisAutoren:
Shelden, Gilbert; Hector, Scott; Marmillion, Patricia; Lercel, Michael
|
| 6 |
Iso-sciatic point: novel approach to distinguish 3-D mask effects from scanner aberrations in extreme ultraviolet lithographyAutoren:
Leunissen, Leonardus H. A.; Gronheid, Roel; Gao, Weimin
|
| 7 |
Characterizing the Response of an EUV Reticle during Electrostatic ChuckingAutoren:
Engelstad, Roxann L.; Lovell, Edward G.; Mikkelson, Andrew R.; Nataraju, Madhura; Ramaswamy, Vasu; Sohn, Jaewoong; Dicks, Gerald A.; Abdo, Amr Y.; Tejeda, Richard O.
|
| 8 |
Printability study with polarization based AIMS(TM) fab 193i to investigate mask polarization effectsAutoren:
Zibold, Axel; Stroessner, Ulrich; Poortinga, Eric; Schmid, Rainer; Scherübl, Thomas; Rosenkranz, Norbert; Harnisch, Wolfgang
|
| 9 |
Rigorous Mask Modeling beyond the Hopkins ApproachAutoren:
Schermer, J.; Evanschitzky, P.; Erdmann, A.
|
| 10 |
Consequences of Plasmonic Effects in PhotomasksAutoren:
Schellenberg, F. M.; Adam, K.; Matteo, J.; Hesselink, L.
|
| 11 |
Calibration of test masks used for lithography lens systemsAutoren:
Arnz, M.; Häßler-Grohne, W.; Bodermann, B.; Bosse, H.
|
| 12 |
Systematic investigation of CD metrology tool response to sidewall profile variation on a COG test maskAutoren:
Gans, F.; Liebe, R.; Heins, Th.; Richter, J.; Häßler-Grohne, W.; Frase, C. G.; Bodermann, B.; Czerkas, S.; Dirscherl, K.; Bosse, H.
|
| 13 |
A new life for a 10-year old MueTec2010, CD measurement system: the ultimate precision upgrade, with additional film thickness measurement capabilityAutoren:
Cassol, Gian Luca; Bianucci, Giovanni; Murai, Shiaki; Falk, Günther; Scheuring, Gerd; Döbereiner, Stefan; Brück, Hans-Jürgen
|
| 14 |
Sub-110 nm line width standards for accuracy calibration of CD-SEM and CD-AFMAutoren:
Shirke, Sanjay; Lorusso, Gian; Blanquies, René; Vandeweyer, Tom
|
| 15 |
Data Prep – The Bottleneck of Future Applications?Autoren:
Gramss, Juergen; Eichhorn, Hans; Lemke, Melchior; Jaritz, Renate; Neick, Volker; Beyer, Dirk; Buerger, Bertram; Baetz, Ulrich; Kunze, Klaus; Belic, Nikola
|
| 16 |
Using Design Intent to Qualify and Control Lithography ManufacturingAutoren:
Vasek, Jim; Wilkinson, Bill; Smith, Dave; Reich, Al; Garza, Cesar; Wiley, Jim; Zhao, Joyce; Poyastro, Moshe; Troy, Brian; Nehmadi, Youval; Abraham, Zamir
|
| 17 |
ORC and LfD as First Steps towards DfMAutoren:
März, Reinhard; Peter, Kai; Maurer, Wilhelm
|
| 18 |
A New Generation of Progressive Mask Defects on the Pattern Side of Advanced PhotomasksAutoren:
Grenon, Brian J.; Bhattacharyya, Kaustuve; Eynon, Benjamin
|
| 19 |
Patterning process development for NIL templatesAutoren:
Sasaki, Shiho; Yoshida, Yuuichi; Amano, Tsuyoshi; Itoh, Kimio; Toyama, Nobuhito; Mohri, Hiroshi; Hayashi, Naoya
|
| 20 |
Plasma deposited and evaporated thin resists for template fabricationAutoren:
Lavallée, Eric; Beauvais, Jacques; Mangoua, Bertrand Takam; Drouin, Dominique
|
| 21 |
A technique to determine capability to detect adjacent defects during the die-to-database inspection of reticle patternsAutoren:
Avakaw, Syarhei; Korneliuk, Aliaksandr; Tsitko, Alena
|
| 22 |
Assist Feature Placement Analysis Using Focus Sensitivity ModelsAutoren:
Melvin III, Lawrence S.; Mayhew, Jeffrey P.; Painter, Benjamin D.; Barnes, Levi D.
|
| 23 |
A Novel Method for the Deposition of Ultra-Uniform Resist Film for Mask MakingAutoren:
Schneider, J.; Picard, G.; Seye, M. F.; Pérez, Maria Helena
|
| 24 |
Design for Manufacturing Validation Tool - Fast and Reliable Conversion of SEM Images to GDS ImagesAutoren:
Ronning, D.; Ducharme, D.; Selzer, R.; Boerger, B.; Yu, M.; Xing, B.; Trybendis, M.; Grenon, B.
|
| 25 |
Laser Mask Repair for Advanced TechnologiesAutoren:
Dinsdale, Andrew; Robinson, Tod; Jeff LeClaire1; White, Roy; Bozak, Ron; Lee, David A.
|
| 26 |
High Resolution Holographic LithographyAutoren:
Bratsev, V. F.; Ochkur, V. I.; Rakhovsky, V. I.; Tolmachev, Yu. A.
|
| 27 |
CD and Profile Metrology of Embedded Phase shift masks using ScatterometryAutoren:
Lee, Kyung man; Yedur, Sanjay; Hetzer, Dave; Tavassoli, Malahat; Baik, Kiho
|
| 28 |
Standardisation of photomask orders: An automation perspectiveAutoren:
Houssos, Nikos; Parchas, Evangelos; Stavroulakis, Stelios; Voyiatzis, Emmanuel; Torsy, Andreas; Filies, Olaf
|
| 29 |
How Refractive Microoptics Enable Lossless Hyper-NA Illumination Systems for Immersion LithographyAutoren:
Ganser, H.; Darscht, M.; Miklyaev, Y.; Hauschild, D.; Aschke, L.
|
| 30 |
A Correlation for Predicting Film Pulling Velocity in Immersion LithographyAutoren:
Schuetter, Scott; Shedd, Timothy; Doxtator, Keith; Nellis, Gregory; Peski, Chris Van
|
| 31 |
The Magic of 4X Mask Reduction Factor?Autoren:
Lercel, Michael
|
| 32 |
Through-pitch and through-focus characterization of AAPSM for ArF immersion lithographyAutoren:
Konishi, Toshio; Kojima, Yosuke; Okuda, Yoshimitsu; Philipsen, Vicky; Leunissen, Leonardus H. A.; Look, Lieve Van
|
| 33 |
Manufacturability and printability of AAPSM with transparent etch stop layerAutoren:
Cangemi, Michael; Philipsen, Vicky; Ruyter, Rudi De; Leunissen, Leonardus; Morgana, Nicolo; Sixt, Pierre; Cangemi, Marc; Cottle, Rand; Kasprowicz, Bryan
|
| 34 |
Analysis method to determine and characterize the mask mean-to-target and uniformity specificationAutoren:
Lee, Sung-Woo; Leunissen, Leonardus H. A.; Kerkhove, Jeroen Van de; Philipsen, Vicky; Jonckheere, Rik; Lee, Suk-Joo; Woo, Sang-Gyun; Cho, Han-Ku; Moon, Joo-Tae
|
| 35 |
Mask absorber material dependence of 2D OPC in 193nm high NA lithographyAutoren:
Cheng, Wen-Hao; Farnsworth, Jeff
|











