SiC BJT Driver applied to a 2 kW Inverter : performances and limitations
Proceedings:
Conference:
CIPS 2010 - 6th International Conference on Integrated Power Electronics Systems
Town:
Nuremberg, Germany
Date:
03/16/2010 - 03/18/2010
Authors:
Tournier, Dominique; Bevilacqua, Pascal; Brosselard, Pierre; Planson, Dominique; Allard, Bruno (Université de Lyon, CNRS, Laboratoire Ampère, INSA-Lyon, Ampere, UMR 5005, 69621, France)
File size:
1.338,72 kB
Pages:
6
Language:
english
Type:
Price:
15.00 €
Payment:
Abstract:
The control of a SiC bipolar transistor may look like the control of its Si counterpart, but not quite in fact. This paper presents a discrete base driver for a SiC bipolar transistor and validates its performances in ambient temperature while the SiC BJT is operated at high temperature. Performances and limitations of a 2 kW SiC-BJT based inverter are investigated.
