VDE/VDI-Gesellschaft Mikroelektronik Mikrosystem- und Feinwerktechnik (GMM) (Ed.)

ICPT 2017

International Conference on Planarization/CMP Technology October, 11 -13, 2017, Leuven, Belgien

2017, 419 pages, 170 x 240 mm, Broschur
ISBN 978-3-8007-4462-6
Supplement: CD
Personal VDE Members are entitled to a 10% discount on this title

Content Foreword

CMP (chemical mechanical planarization), as one of the most important processes in the semiconductor manufacturing, has been developed and improved continuously year after year. It has built a certain position in related industries, and is expanding in its applied area. From the user's point of view, technical demand is becoming higher and higher, and additional applications beyond the semiconductor area are increasing.

ICPT (International Conference on Planarization/CMP Technology), is a magnificent opportunity to have discussions on CMP technologies, including FEOL and BEOL CMP, Fundamentals of CMP, Polishing Processes, Consumables, Equipment, 3D/TSV, Metrology, Cleaning, Defect Control, Process Control, etc. The conference provides a place where every relevant researcher and engineer can get together to discuss openly and exchange information widely.
GMM – VDE/VDI-Gesellschaft Mikroelektronik, Mikrosystem- und Feinwerktechnik (GMM)

Die GMM hat die Aufgabe, die wissenschaftliche und technische Entwicklung im Bereich der Mikroelektronik, Mikrosystem-, Nano- und Feinwerktechnik sowie deren breite Anwendungen zu fördern.
Sie initiiert den dazu erforderlichen Dialog zwischen Herstellern, Anwendern und Wissenschaft und bildet ein Forum für Diskussionen über diese Techniken in der Öffentlichkeit. Die GMM vertritt die Belange der in ihr vertretenen Arbeits- und Fachgebiete gegenüber politischen Entscheidungsträgern und bringt ihre Fachkompetenz in die Gestaltung der Förderpolitik ein.

1

Electrochemical study of SiGe in different alkaline chemical formulations

Authors:
Yang, Shenghua; Zhang, Baoguo; Liu, Yuling; Wang, Chenwei

2

Modified Kinematic Model for Predicting Contact Points of Conditioner in CMP

Authors:
Choi, Jihye; Kim, Eungcher; Shin, Cheolmin; Jin, Yinhua; Kim, Taesung

3

In situ imaging of local corrosion cells on copper fine wires in solutions

Authors:
Takatoh, Chikako; Ogata, Shoichiro; Kitagawa, Takuya; Okamoto, Takahiro

4

5

Investigation of Mass Transfer Speed Theory on chemical mechanical polishing

Authors:
Liu, Yuling; Li, Yanlei; Wang, Chenwei; Yang, Liu; Wang, Jianchao

6

Effect of Guanidine Sulfate on the CMP of Ru in H2O2 Based Slurry

Authors:
Yang, Guang; He, Peng; Qu, Xin-Ping

7

Effect of Deposition Methods on Material Removal Rate During Nickel CMP

Authors:
Wang, Yanni; Teugels, Lieve; Vandersmissen, Kevin; De Gendt, Stefan; Krishnan, Sitaraman; Struyf, Herbert

8

9

Density Evaluation of Sub-100 nm Particles by Using Ellipsometry

Authors:
Kondoh, Eiichi; Suzuki, Katsuya; Jin, Lianhua; Hamada, Satomi; Shima, Shohei; Hiyama, Hirokuni

10

Measurement of Removal Force in DI-Water for Fine Particles with Sub-nanoNewton Resolution

Authors:
Shima, Shohei; Hamada, Satomi; Takatoh, Chikako; Wada, Yutaka; Fukunaga, Akira; Sobukawa, Hiroshi

11

BEoL post CMP cleaning challenges for 22 nm FD-SOI and beyond

Authors:
Koch, Johannes; Rehschuh, Stephan; Gerlich, Lukas; Dhavamani, Abitha; Steinke, Philipp; Krause, Robert; Naue, Johannes; Bott, Sascha; Vasilev, Boris; Breuer, Dirk; Seidel, Robert; Preusse, Axel; Bartha, Johann Wolfgang; Uhlig, Benjamin

12

In-line Atomic Resolution Local Nanotopography Variation Metrology for CMP Process

Authors:
Kim, Tae-Gon; Heylen, Nancy; Kim, Soon-Wook; Vandeweyer, Tom; Jo, Ah-Jin; Lee, Ju Suk; Ahn, Byoung-Woon; Cho, Sang-Joon; Park, Sang-il; Irmer, Bernd; Schmidt, Sebastian

13

14

Novel Method for Nano-Surface Analysis of Cu CMP Chemicals by AFM and Microfluidic Chip System

Authors:
Ryu, Heon-Yul; Han, Kwang-Min; Cho, Byoung-Jun; Shima, Shohei; Hamada, Satomi; Hiyama, Hirokuni; Kim, Tae-Gon; Park, Jin-Goo

15

Improvement of Material Removal Efficiency by Optimization of Anisotropic Contact of Pad Asperities

Authors:
Suzuki, Norikazu; Oshika, Shingo; Misono, Hirotaka; Hashimoto, Yohei; Yasuda, Hozumi; Mochizuki, Yoshihiro

16

17

Stabilization method of transition metal catalyst for high efficiency catalyst-referred etching (CARE) of silicon carbide

Authors:
Toh, Daisetsu; Isohashi, Ai; Inada, Tatuaki; Nakahira, Yuta; Kida, Hideka; Matuyama, Satoshi; Sano, Yasuhisa; Yamauchi, Kazuto

18

Stabilization of removal rate of silica glass on catalystreferred etching by cleaning catalyst surface

Authors:
Nakahira, Yuta; Isohashi, Ai; Inada, Tatsuaki; Toh, Daisetsu; Kida, Hideka; Matsuyama, Satoshi; Sano, Yasuhisa; Yamauchi, Kazuto

19

High-efficiency Planarization of GaN Wefers by Catalyst-Referred Etching Employing Photoelectrochemical Oxdation

Authors:
Kida, Hideka; Isohashi, Ai; Inada, Tatsuaki; Matsuyama, Satoshi; Sano, Yasuhisa; Yamauchi, Kazuto

20

STI CMP Endpoint Robustness Improvement through Stribeck Curve Study

Authors:
Perrot, C.; Bouis, R.; Daventure, N.; Euvrard, C.; Balan, V.

21

Device pattern impact on optical endpoint detection by interferometry for STI CMP

Authors:
Bourzgui, S.; Roussy, A.; Georges, G.; Faivre, E.; Labory, K.; Allard, A.

22

Application of Slurry Injection System (SIS) to Advanced Deep-Trench (DT) CMP

Authors:
Jha, Amarnath; Stoll, Derek; Tseng, Wei-Tsu; Wu, Changhong; Yang, Ji Chul; Philipossian, Ara

23

Chemical Generation Mechanism of Copper Flakes on Copper Wafer Surface from CMP Slurry and Post CMP Cleaning Chemistry

Authors:
Cho, Byoung-Jun; Paluvai, Nagarjuna R.; Purushothaman, Muthukrishanan; Lee, Jung-Hwan; Shima, Shohei; Hiyama, Hirokuni; Park, Jin-Goo

24

Development of Post InGaAs CMP Cleaning Process for sub 10nm Device Application

Authors:
Purushothaman, Muthukrishnan; Choi, In-chan; Kim, Hyun-Tae; Teugels, Lieve; Kim, Tae-Gon; Park, Jin-Goo

25

Post-CMP Cleaners for Tungsten Advanced Nodes: 10 nm and 7 nm

Authors:
Lieten, Ruben R.; White, Daniela; Parson, Thomas; Jenq, Shining; Frye, Don; White, Michael; Teugels, Lieve; Struyf, Herbert

26

27

Planarization of SiC wafer using photo-catalyst incorporated pad

Authors:
Zhou, Yan; Pan, Guoshun; Zou, Chunli; Luo, Guihai; Luo, Haimei

28

29

Controllable CMP of Oxide Film by Using Colloidal Ceria Slurry

Authors:
Kurokawa, Syuhei; Toyama, Takaaki; Hayashi, Terutake; Suda, Eisaku; Tokuda, Jun

30

31

32

Chemo-Mechanical Planarization of Germanium Using Potassium Periodate based Titania Slurries

Authors:
Gupta, Apeksha; Victoria, S. Noyel; Manivannan, R.

33

34

Novel Copper Barrier Slurry for Advanced Cu CMP Process

Authors:
Chao, Lucas; Hung, Steve; Huang, Tommy; Chou, Julia; Yang, William; Luo, Michael; Kuo, Wendy

35

36

Control of Silica Particle Deposition for Fabrication of Post CMP Cleaning Ability Evaluation Wafer

Authors:
Cho, Younsun; Chae, Seung-Ki; Shin, Cheolmin; Jin, Yinhua; Kim, Taesung

37

38

Evaluation of Competitive Reaction of Various Cu CMP Slurry Components

Authors:
Han, Kwang-Min; Cho, Byoung-Jun; Lee, Jung-Hwan; Ryu, Heon-Yul; Shima, Shohei; Hamada, Satomi; Hiyama, Hirokuni; Park, Jin-Goo

39

40

Development of Novel Cleaning Solution for Post Chemical Mechanical Planarization Silicon Wafer

Authors:
Song, Junghwan; Han, Na; Park, Kihong; Yi, Sokho; Kim, Taesung

41

Innovative CMP Solution for Advanced STI Process

Authors:
Pan, Ji Gang; Hung, Steve; Zhang, Qiao Feng; Lu, Chen; Cao, Yi; Qian, Bainian; Su, Elton; Yang, William

42

Pad Conditioning for Poromeric Materials

Authors:
Scott Lawing, Andrew

43

Development of Advanced CMP Process for the Minimization of Hydrophobic Interaction based on the Surface Treatment Technology

Authors:
Kim, Hyuk-Min; Heo, Jee-Hwan; Kang, Jung-Eun; Park, Seung-Ho; Park, Jong-Hyuk; Yoon, Il-Young; Yoon, Bo-Un; Nam, Seok-Woo

44

W CMP Tiny Particle Reduction Solution

Authors:
Li,Kun; Wang, Tongqing; Zheng, Shumao; Lu, Xinchun

45

46

Investigations of Annealing Effect on TSV CMP

Authors:
Rao, Can; Wang, Tongqing; Cheng, Jie; Liu, Yuhong; Lu, Xinchun

47

CMP Process for (110)-Germanium Roughness Reduction

Authors:
Lisker, Marco; Krueger, Andreas; Lupina, Grzegorz; Yamamoto, Yuji; Mai, Andreas

48

Cu Barrier Metal Slurry for Reducing Defect-Level and Enhancing Removal Performances

Authors:
Hong, Seungchul; Lim, Jinhyuk; Kang, Hyungoo; Jin, Gyuan; Kim, Byoungsoo; Lee, Seunghyun; Kim, Youngho

49

Observation of the real contact area between PVA brush and surface using polarization plate and evanescent field

Authors:
Hanai, Masanao; Sanada, Toshiyuki; Fukunaga, Akira; Hiyama, Hirokuni

50

Highly Efficient Cleaning Formulations for Removing Ceria Slurry Residues in Post-CMP Applications

Authors:
Bernatis, Paul; Lin, Jhih-Fong; Tai, Pei-Yu; Lin, Yi-Han; Bai, Chia-Hui; Tseng, Yi-Hao; Kuroda, Akira; Yen, Chi

51

CMP Process for Wafer Backside Planarization

Authors:
Krueger, Andreas; Lisker, Marco; Trusch, Andreas; Mai, Andreas

52

Optimization of Cu Corrosion Inhibitor Concentration to Reduce Organic Defects

Authors:
Cho, Byoung-Jun; Pyun, Hae-Jung; Shima, Shohei; Hamada, Satomi; Hiyama, Hirokuni; Park, Jin-Goo

53

Dummy Gate Amorphous Silicon CMP Using In-situ Profile CLC Endpoint System for Advanced FinFET

Authors:
Tsvetanova, Diana; Iizumi, Takeshi; Ito, Ban; Royere, Gael; Durix, Fabien; Devriendt, Katia; Ong, Patrick; Struyf, Herbert

54

Corrosion inhibition of Cobalt during post-Chemical Mechanical Planarization Cleaning

Authors:
Shibata, Toshiaki; Kusano, Tomohiro; Harada, Ken; Takeshita, Kan; Kawase, Yasuhiro

55

Influence of different polishing parameters on sapphire substrate CMP

Authors:
Niu, Xinhuan; Zhao, Xin; Yin, Da; Wang, Jianchao; Wang, Chenwei

56

Effect of Flow Rate and Concentration on Filtration Efficiency of Colloidal Abrasives

Authors:
Wu, Mia; Lee, James; Wang, Henry; Hsiao, Steven; Shie, Bob; Yang, HJ

57

Preparation of Ordered Mesoporous Si02/Mc N anocomposite Abrasives and Their Chemical Polishing Behavior on Fused Silicon Substrates

Authors:
Li , Xu; Chunli, Zou; Xin, Zhang; Chengxi, Kang; Guihai, Luo; Guoshun, Pan

58

Evaluation of Polyurethane Pads Properties for Effective Use in Planarization Process

Authors:
Chung, Hyunjae; Shin, Cheolmin; Jin, Yinhua; Kim, Taesung

59

Carbon Compound Particle Residue Defect Remove by CMP Post Clean

Authors:
Chen, Shih-Hsi; Yen, Shih-Ci; Chen, Ming-Hsiang; Chen, Ming-Hong; Liu, Chiao-Wei

60

Effect of colloidal silica particles on subsurface damage of fused silica optics during CMP process

Authors:
Chunli, Zou; Li, Xu; Chengxi, Kang; Xin, Zhang; Guoshun, Pan

61

The Effect of chelating Agent in TMAH Based Post Cu-CMP Cleaning Solution

Authors:
Jeon, Seongsik; Jeon, Sanghyuk; Lim, Ahhyeon; Yi, Sokho; Kim, Taesung

62

Effect of Al2O3 and SiO2 Abrasives on the CMP of Molybdenum using Different Polishing Parameters

Authors:
Kalantzis, Panagiotis; Teugels, Lieve; De Gendt, Stefan

63

64

65

A Study of Cu inhibitor removal by alkaline agent in post CMP cleaning process

Authors:
Gao, Baohong; Tan, Baimei; Liu, Yuling

66

67

68

Improvement of Ruthenium Polishing Rate by Addition of Guanidinium Ions

Authors:
Wang, Chenwei; Du, Yichen; Zhou, Jianwei; Liu, Yuling

69

Optimization of WC-Co Composition for CVD Diamond Pad Conditioner

Authors:
Kim, Myeong-Jun; Ryu, Heon-Yul; Lee, Jung-Hwan; Kim, Ji-Woo; Cho, Sooji; Hyun, Dabin; Jee, Hae-geun; Park, Jin-Goo

70

Torque measurements generated by a rotating PVA brush without a skin layer

Authors:
Ito, Masayoshi Jr.; Sanada, Toshiyuki; Fukunaga, Akira; Hiyama, Hirokuni

71

72

73

Study on the Grit Angle of Single Diamond Dressing on CMP Pads

Authors:
Chen, Chao-Chang Arthur; Yi-Ting; Li, Tzu-Hao; Hiyama, Hirokuni; Wada, Yutaka; Shiu, Pei-Jiun Ricky; Kimura, Keiichi