HHI ; IAF ; VDE (Hrsg.)

23rd International Conference on Indium Phosphide and Related Materials - IPRM 2011

May 22-26, 2011, Maritim proArte Hotel, Berlin, Germany, Conference Proceedings

2011, 490 Seiten, DIN A4, kartoniert,
ISBN 978-3-8007-3356-9
Rabatt

Inhaltsverzeichnis

IPRM 2011 continues bringing together scientists from academia and industry to share recent developments and achievements in the area of InP technology. Again optoelectronic and electronic devices including related fabrication processes, and bulk and epitaxial materials as well as nanostructures and novel materials continue to represent major subjects of the conference. In addition Photonic integration technologies have been included as a new topic to highlight the regained importance of this field which proves to be particularly specific to InP.
Dieser Tagungsband enthält folgende Beiträge, die Sie einzeln als PDF-Download erwerben können:
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1

AlGaInAs based photonic devices for high-speed data transmission

Autoren:
Yamamoto, Tsuyoshi; Yamamoto, Tsuyoshi; Yamamoto, Tsuyoshi; Simoyama, Takasi; Simoyama, Takasi; Simoyama, Takasi; Tanaka, Shinsuke; Matsuda, Manabu; Matsuda, Manabu; Matsuda, Manabu; Uetake, Ayahito; Uetake, Ayahito; Uetake, Ayahito; Okumura, Shigekazu; Ekawa, Mitsuru; Ekawa, Mitsuru; Ekawa, Mitsuru; Morito, Ken
2

Low-Cost 25Gb/s 1300nm Electroabsorption-Modulated InGaAlAs RW-DFB-Laser

Autoren:
Moehrle, Martin; Przyrembel, Georges; Bornholdt, Carsten; Sigmund, Ariane; Molzow, Wolf-Dietrich; Klein, Holger
3

Low-Threshold 3 µm GaInAsSb/AlGaInAsSb Quantum-Well Lasers Operating in Continuous-Wave up to 64 °C

Autoren:
Vizbaras, Kristijonas; Andrejew, Alexander; Vizbaras, Augustinas; Grasse, Christian; Arafin, Shamsul; Amann, Markus-Christian
4

Narrow Linewidth 1.52 µm InAs/InP Quantum Dot DFB Lasers

Autoren:
Poole, P. J.; Lu, Z. G.; Liu, J. R.; Barrios, P.; Jiao, Z. J.; Poitras, D.; SpringThorpe, A. J.; Pakulski, G.; Goodchild, D.; Rioux, B.
5

Single-Wavelength InGaAs/AlAs(Sb) Quantum Cascade Lasers

Autoren:
Slight, Thomas; Slight, Thomas; Phelan, Richard; Revin, Dmitry; McKee, Andrew; Cockburn, John; Kelly, Brian; Ironside, Charles
6

InP HBTs for THz Frequency Integrated Circuits

Autoren:
Urteaga, M.; Seo, M.; Hacker, J.; Griffith, Z.; Young, A.; Pierson, R.; Rowell, P.; Skalare, A.; Jain, V.; Lobisser, E.; Rodwell, M. J. W.
7

InGaAs/InP DHBTs demonstrating simultaneous ftau/fmax ~ 460/850 GHz in a refractory emitter process

Autoren:
Jain, Vibhor; Lobisser, Evan; Baraskar, Ashish; Thibeault, Brian J.; Rodwell, Mark J. W.; Urteaga, M.; Loubychev, D.; Snyder, A.; Wu, Y.; Fastenau, J. M.; Liu, W. K.
8

High-Speed and Low-Power Static Frequency Divider and Decision Circuit with 0.5-?m-emitter-width InP HBTs

Autoren:
Bouvier, Y.; Nagatani, M.; Sano, K.; Murata, K.; Kurishima, K.; Ida, M.
9

InP Lattice-matched HEMT with Regrown Source/Drain by MOCVD

Autoren:
Li, Qiang; Li, Ming; Tang, Chak Wah; Lau, Kei May
10

Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition

Autoren:
Schleeh, J.; Halonen, J.; Nilsson, B.; Nilsson, P. Å.; Zeng, L. J.; Ramvall, P.; Wadefalk, N.; Zirath, H.; Olsson, E.; Grahn, J.
11

Metal-cavity Nanolasers - Theory and Experiment

Autoren:
Chuang, Shun Lien; Lu, Chien-Yao; Chang, Shu-Wei; Germann, Tim D.; Pohl, Udo W.; Bimberg, Dieter
12

High repetition rate two-section InAs/InP Quantum-Dash Passively Mode Locked Lasers

Autoren:
Rosales, R.; Merghem, K.; Martinez, A.; Accard, A.; Lelarge, F.; Ramdane, A.
13

Improvement of modal gain of InAs/InP Quantum-Dash Lasers

Autoren:
Merghem, K.; Rosales, R.; Martinez, A.; Patriarche, G.; Ramdane, A.; Chimot, N.; Dijk, F. van; Moustapha-Rabault, Y.; Poingt, F.; Lelarge, F.
14

InAs/InGaAsP Quantum Dots Emitting at 1.5 µm for Applications in Lasers

Autoren:
Semenova, E. S.; Kulkova, I. V.; Kadkhodazadeh, S.; Kadkhodazadeh, S.; Schubert, M.; Dunin-Borkowski, R. E.; Yvind, K.
15

Current-injected Quantum-dot Microdisk Lasers Operating at Room Temperature

Autoren:
Mao, M.-H.; Chien, H. C.; Hong, J. Z.
16

III-V on Silicon for High-Speed Electronics and CMOS Photonics

Autoren:
Takenaka, Mitsuru; Takagi, Shinichi
17

ALD Al2O3 Activated Direct Wafer Bonding for III-V CMOS Photonics Platform

Autoren:
Ikku, Y.; Yokoyama, M.; Iida, R.; Sugiyama, M.; Nakano, Y.; Takenaka, M.; Takagi, S.
18

Optimisation of seed and mask surfaces in epitaxial lateral overgrowth of indium phosphide on silicon for silicon photonics

Autoren:
Junesand, Carl; Hu, Chen; Wang, Zhechao; Metaferia, Wondwosen; Lourdudoss, Sebastian
19

Carrier Injection in GaAsPN/GaPN Quantum Wells on Silicon

Autoren:
Cornet, C.; Robert, C.; Thanh, T. Nguyen; Guo, W.; Bondi, A.; Elias, G.; Létoublon, A.; Richard, S.; Burin, J.-P.; Perrin, M.; Jancu, J.-M.; Durand, O.; Even, J.; Loualiche, S.; Folliot, H.; Bertru, N.; Ponchet, A.; Corre, A. Le
20

Electrical Pumping Febry-Perot Lasing of III-V Layer On Highly Doped Silicon Micro Rib by Plasma Assisted Direct Bonding

Autoren:
Li, Linghan; Takigawa, Ryo; Higo, Akio; Higurashi, Eiji; Sugiyama, Masakazu; Nakano, Yoshiaki
21

Metamorphic and Non-conventional 'Buffer' Layers

Autoren:
Kuech, T. F.; Jha, S.; Wiedmann, M. K.; Paulson, C. A.; Babcock, S. E.; Kuan, T. S.; Mawst, L. J.; Kirch, J.; Kimd, Tae Wan
22

Metamorphic Te-doped Al0.4In0.6Sb/Ga0.4In0.6Sb HEMT structures for low power and high frequency applications

Autoren:
Loesch, R.
23

Characteristics of Step-Graded InxGa1-xAs and InGaPySb1-y Metamorphic Buffer Layers on GaAs Substrates

Autoren:
Kirch, J.; Dudley, P.; Kim, T.; Radavich, K.; Ruder, S.; Mawst, L. J.; Kuech, T. F.; LaLumondiere, S. D.; Sin, Y.; Lotshaw, W. T.; Moss, S. C.
24

Structural evaluation of GaAs1-xBix mixed crystals by TEM

Autoren:
Ueda, Osamu; Tominaga, Yoriko; Ikenaga, Noriaki; Yoshimoto, Masahiro; Oe, Kunishige
25

Carrier-mediated ferromagnetism in InGaGdN grown by plasma-assisted molecular beam epitaxy

Autoren:
Tawil, S. N. M.; Zhou, Y. K.; Krishnamurthy, D.; Emura, S.; Hasegawa, S.; Asahi, H.
26

Nanoimprint lithography for photonic devices

Autoren:
Niemi, Tapio
27

80deg C Continuous Wave Operation of Photonic-Crystal Nanocavity Lasers

Autoren:
Takeda, Koji; Sato, Tomonari; Shinya, Akihiko; Nozaki, Kengo; Chen, Chin-Hui; Kawaguchi, Yoshihiro; Taniyama, Hideaki; Notomi, Masaya; Matsuo, Shinji
28

Narrow linewidth 1.55 µm laterally-coupled DFB lasers fabricated using nanoimprint lithography

Autoren:
Telkkälä, Jarkko; Viheriälä, Jukka; Bister, Mariia; Karinen, Jukka; Melanen, Petri; Dumitrescu, Mihail; Guina, Mircea
29

Lasing Operation of Long-Wavelength Transistor Laser Using AGaInAs/InP Quantum Well Active Region

Autoren:
Shirao, Mizuki; Sato, Takashi; Takino, Yuta; Sato, Noriaki; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa
30

Thermal Dissipation In InP Based Optical Lasers and Amplifiers

Autoren:
Jacquet, Joël; Faugeron, Mickael; Faugeron, Mickael; Abner, Yannick; Choffla, Manish; Dijk, Frédéric Van; Brenot, Romain
31

The optoelectronic performance of axial and radial GaAs nanowire pn-diodes

Autoren:
Lysov, A.; Gutsche, C.; Offer, M.; Regolin, I.; Prost, W.; Tegude, F.-J.
32

Optical properties of wurtzite InAs/lnP core-shell nanowires grown on silicon substrates

Autoren:
Khmissi, H.; Khmissi, H.; Alouane, M. H. Hadj; Alouane, M. H. Hadj; Chauvin, N.; Naji, K.; Patriarche, G.; Ilahi, B.; Maaref, H.; Bru-Chevallier, C.; Gendry, M.
33

Positioned Growth and Spectroscopy of InP Nanowires Containing Single InAsP Quantum Dots

Autoren:
Poole, P. J.; Dalacu, D.; Lapointe, J.; Mnaymneh, K.; Wu, X.
34

MOVPE Growth and Optical Properties of Wurtzite InP Nanowires with Radial InP/InAsP Quantum Wells

Autoren:
Kawaguchi, Kenichi; Kawaguchi, Kenichi; Heurlin, Magnus; Lindgren, David; Borgström, Magnus T.; Samuelson, Lars
35

High-Speed InP-HEMTs: Low-Noise Performance and Cryogenic Operation

Autoren:
Endoh, Akira; Endoh, Akira; Watanabe, Issei; Mimura, Takashi; Mimura, Takashi; Matsui, Toshiaki
36

20 nm Metamorphic HEMT with 660 GHz FT

Autoren:
Leuther, A.; Koch, S.; Tessmann, A.; Kallfass, I.; Merkle, T.; Massler, H.; Loesch, R.; Schlechtweg, M.; Saito, S.; Ambacher, O.
37

Injection Velocity in Thin-Channel InAs HEMTs

Autoren:
Kim, Tae-Woo; Alamo, Jesús A. del
38

Noise Properties of Asymmetrically Recessed InP-based HEMTs for Low-noise Amplifiers

Autoren:
Takahashi, T.; Sato, M.; Makiyama, K.; Nakasha, Y.; Hirose, T.; Hara, N.
39

Ultra-Low Noise InP pHEMTs for Cryogenic Deep-Space and Radio- Astronomy Applications

Autoren:
Alt, A. R.; Bolognesi, C. R.; Gallego, J. D.; Diez, C.; Lopez-Fernandez, I.; Barcia, A.
40

III-V CMOS: What have we learned from HEMTs?

Autoren:
Alamo, Jesús A. del; Kim, Dae-Hyun; Kim, Dae-Hyun; Kim, Tae-Woo; Jin, Donghyun; Antoniadis, Dimitri A.
41

InGaAs MOS-HEMTs on Si Substrates Grown by MOCVD

Autoren:
Zhou, Xiuju; Tang, Chak Wah; Li, Qiang; Lau, Kei May
42

Self-aligned Metal S/D InP MOSFETs using Metallic Ni-InP alloys

Autoren:
Kim, S. H.; Yokoyama, M.; Taoka, N.; Iida, R.; Lee, S.; Nakane, R.; Urabe, Y.; Miyata, N.; Yasuda, T.; Yamada, H.; Fukuhara, N.; Hata, M.; Takenaka, M.; Takagi, S.
43

Reduction of source parasitic capacitance in vertical InGaAs MISFET

Autoren:
Matsumoto, Yutaka; Saito, Hisashi; Miyamoto, Yasuyuki
44

Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs

Autoren:
Morassi, Luca; Verzellesi, Giovanni; Larcher, Luca; Zhao, Han; Lee, Jack C.
45

On-chip Laser with Multimode Interference Reflectors Realized in a Generic Integration Platform

Autoren:
Zhao, J.; Kleijn, E.; Williams, P. J.; Smit, M. K.; Leijtens, X. J. M.
46

Low-power Consumption and High-eye-margin 10 Gbit/s Operation of Distributed Reflector Laser with Wirelike Active Regions

Autoren:
Takahashi, Daisuke; Lee, Seunghun; Shindo, Takahiko; Shinno, Keisuke; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa
47

Lateral Current Injection Distributed Feedback Laser with Wirelike Active Regions

Autoren:
Shindo, Takahiko; Okumura, Tadashi; Futami, Mitsuaki; Osabe, Ryo; Ito, Hitomi; Koguchi, Takayuki; Amemiya, Tomohiro; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa
48

High-speed directly-modulated lasers with photon-photon resonance

Autoren:
Dumitrescu, M.; Telkkälä, J.; Karinen, J.; Viheriälä, J.; Laakso, A.; Afzal, S.; Reithmaier, J.-P.; Kamp, M.; Melanen, P.; Uusimaa, P.; Greadye, D.; Eisenstein, G.
49

A cost-effective thermal managed high output power VECSEL with hybrid mirror on Copper substrate at 1,55micrometer

Autoren:
Zhao, Z.; Ferlazzo, L.; Decobert, J.; Harmand, J. L.; Oudar, J. L.; Bouchoule, S.
50

Integration of III/V lattice-matched on (001) Silicon for optoelectronic

Autoren:
Kunert, Bemardette; Volz, Kerstin; Stolz, Wolfgang
51

MOVPE preparation and in situ spectroscopy of Si(100) substrates for III-V heteroepitaxy

Autoren:
Bruckner, Sebastian; Döscher, Henning; Dobrich, Anja; Supplie, Oliver; Kleinschmidt, Peter; Hannappel, Thomas
52

Measurement of the Interface Specific Resistivity of a Heavily Doped n-Type InP/GaInAs Heterostructure

Autoren:
Halevy, Ran; Cohen, Shimon; Gavrilov, Arkadi; Ritter, Dan
53

Time Resolved Measurement of Interface and Bulk Recombination of Solar Cell Materials

Autoren:
Szabó, Nadine; Schwarzburg, Klaus; Dobrich, Anja; Hannappel, Thomas
54

Regrowth-Free Multi-Guide Vertical Integration in InP for Optical Communications

Autoren:
Tolstikhin, Valery
55

A Generic InP-based Photonic Integration Technology

Autoren:
Ambrosius, H. P. M. M.; Leijtens, X. J. M.; Vries, T. de; Bolk, J.; Smalbrugge, E.; Smit, M. K.
56

Performance of InP-Based 90deg-Hybrids QPSK Receivers within C-Band

Autoren:
Zhang, R.-Y.; Janiak, K.; Bach, H.-G.; Kunkel, R.; Seeger, A.; Schubert, S.; Schell, M.; Matiss, A.; Umbach, A.
57

Two-bandgap semiconductor optical amplifier integrated using quantum well intermixing

Autoren:
Lee, Ko-Hsin; Webb, Roderick P.; Webb, Roderick P.; Manning, Robert J.; Manning, Robert J.; Roycroft, Brendan; O’Callaghan, James; Peters, Frank H.; Peters, Frank H.; Corbett, Brian
58

In situ characterization of III-V/Si(100) anti-phase disorder

Autoren:
Doscher, Henning; Supplie, Oliver; Bruckner, Sebastian; Hannappel, Thomas
59

Scanning tunneling microscopy and spectroscopy of InAsP/InP(001) quantum dots

Autoren:
Fain, Bruno; Girard, J. C.; David, C.; Patriarche, G.; Largeau, L.; Beveratos, A.; Elvira, D.; Robert-Philip, I.; Beaudoin, G.; Sagnes, I.; Wang, Z. Z.
60

Analysis and optimization by micro-beam X-ray diffraction of Al-GaInAs heterostructures obtained by Selective Area Growth for optoelectronic applications

Autoren:
Guillamet, Ronan; Lagay, Nadine; Mocuta, Cristian; Carbone, Gerardina; Lagrée, Pierre-Yves; Decobert, Jean
61

GaP(100) and InP(100) surface structures in the MOVPE ambient

Autoren:
Döscher, H.; Möller, K.; Vogt, P.; Kleinschmidt, P.; Hannappel, T.
62

Atomic ordering and decomposition of lattice matched InxGa1-xAsyP1-y on InP(001)

Autoren:
Lenz, Andrea; Eisele, Holger; Genz, Florian; Franke, Dieter; Künzel, Harald; Pohl, Udo W.; Dähne, Mario
63

25-Gb/s Multi-channel 1.3-µm Surface-emitting Laser

Autoren:
Adachi, K.; Adachi, K.; Shinoda, K.; Shinoda, K.; Kitatani, T.; Kitatani, T.; Matsuoka, Y.; Sugawara, T.; Tsuji, S.; Tsuji, S.
64

Novel concept for a Monolithically Integrated MEMS VCSEL

Autoren:
Gruendl, Tobias; Nagel, Robin D.; Debernardi, Pierluigi; Geiger, Kathrin; Grasse, Christian; Hager, Thomas; Ortsiefer, Markus; Rosskopf, Jürgen; Boehm, Gerhard; Meyer, Ralf; Amann, M.-C.
65

Waveguide AlInAs/GaInAs APD for 40Gb/s optical receivers

Autoren:
Lahrichi, M.; Glastre, G.; Paret, J.-F.; Carpentier, D.; Lanteri, D.; Lagay, N.; Decobert, J.; Achouche, M.
66

Demonstration of a 34 nm monolithic continuously tunable VCSEL at 1.55 µm combined with liquid crystal

Autoren:
Castany, O.; Paranthoen, C.; Levallois, C.; Shuaib, A.; Gauthier, J. P.; Chevalier, N.; Durand, O.; Dupont, L.; Corre, A. Le
67

Proposal and Numerical Analysis of Ultra-fast Optical Logic Devices with Integrated InAs QD-SOA and Ring Resonato

Autoren:
Matsumoto, A.; Kuwata, K.; Akahane, K.; Utaka, K.
68

Monolithic Flip-Chip Compatible Twin-IQ Mach-Zehnder Modulators for Hybrid Assembly onto High Capacity Optical Transmitter Boards

Autoren:
Kaiser, R.; Velthaus, K. O.; Brast, T.; Maul, B.; Gruner, M.; Klein, H.; Hamacher, M.; Hoffmann, D.; Schell, M.
69

Hybrid Photonic Integration of InP-Based Laser Diodes and Polymer PLCs

Autoren:
Soares, F. M.; Zhang, Z.; Przyrembel, G.; Lauermann, M.; Moehrle, M.; Zawadzki, C.; Zittermann, B.; Keil, N.; Grote, N.
70

All-Optical Gating Operation in Hybrid Si/III-V Mach-Zehnder Interferometer

Autoren:
Shoji, Yuya; Akimoto, Ryoichi; Kintaka, Kenji; Suda, Satoshi; Kawashima, Hitoshi; Gozu, Shin-ichiro; Mozume, Teruo; Kuwatsuka, Haruhiko; Hasama, Toshifumi; Ishikawa, Hiroshi
71

1550 nm Flip-Chip Compatible Electroabsorption-Modulated Laser with 40 Gb/s modulation capability

Autoren:
Kreissl, Jochen; Bornholdt, Carsten; Gaertner, Tom; Moerl, Ludwig; Przyrembel, Georges; Rehbein, Wolfgang
72

InP HBT Technology Activities in Europe

Autoren:
Konczykowska, Agnieszka
73

Strain Effects on Performances in InAs HEMTs

Autoren:
Machida, F.; Nishino, H.; Sato, J.; Watanabe, H.; Hara, S.; Fujishiro, H. I.
74

Influence of self-heating on the impact-ionization gate leakage in AlInAs/InGaAs/InP HEMTs

Autoren:
Scavennec, André; Maher, Hassan; Decobert, Jean
75

High Current Gain of Doping-Graded GaAsSb/lnP DHBTs

Autoren:
Wu, Bing-Ruey; Dvorak, Martin W.; Colbus, Patrick; Low, Tom S.; D'Avanzo, Don
76

Weak Emitter-Size Effect in InP/In0.37Ga0.63As0.89Sb0.11/In0.53Ga0.47As Double Heterojunction Bipolar Transistors

Autoren:
Chang, Che-An; Chen, Shu-Han; Chen, Shu-Han; Wang, Sheng-Yu; Chang, Chao-Min; Chyi, Jen-Inn; Chyi, Jen-Inn; Chyi, Jen-Inn
77

Pyramidal quantum dots: a versatile playground for quantum dot design and physics

Autoren:
Pelucchi, E.; Dimastrodonato, V.; Mereni, L. O.; Juska, G.; Gocalinska, A.
78

Long wavelength emission from nano-cone structures with embedded single InAs/InGaAlAs quantum dots grown on InP substrates

Autoren:
Hermannstädter, C.; Huh, J.-H.; Huh, J.-H.; Jahan, N. A.; Jahan, N. A.; Sasakura, H.; Sasakura, H.; Suemune, I.; Suemune, I.
79

Effect of MOVPE Growth Conditions on The Formation of Self-Organized InAs/InGaAsP/InP Quantum Dots

Autoren:
Wenning, Felix; Kuenzel, Harald; Pohl, Udo W.
80

Analysis of in situ reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: towards a comprehensive understanding of strain accumulation influence on solar cell properties

Autoren:
Wang, Yunpeng; Wen, Yu; Sugiyama, Masakazu; Nakano, Yoshiaki
81

Evidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performance

Autoren:
Wen, Yu; Wang, Yunpeng; Sugiyama, Masakazu; Nakano, Yoshiaki
82

High performance InP-based Mach-Zehnder modulators for 10 to 100 Gb/s optical fiber transmission systems

Autoren:
Velthaus, K.-O.; Hamacher, M.; Gruner, M.; Brast, T.; Kaiser, R.; Prosyk, K.; Woods, I.
83

High-yield Manufacturing of InP Dual-Port Coherent Receiver Photonic Integrated Circuits for 100G PDM-QPSK Application

Autoren:
Hu, Ting-Chen; Weimann, N.; Houtsma, V.; Kopf, R.; Tate, A.; Frackoviak, J.; Reyes, R.; Chen, Y. K.; Achouche, M.; Lelarge, F.
84

4 x 4 InAlGaAs/InAlAs optical switch fabric by cascading Mach-Zehnder interferometer-type optical switches with low-power and low-polarization-dependent operation

Autoren:
Ueda, Yuta; Koyama, Noriaki; Kambayashi, Kazuki; Fujimoto, Shinji; Utaka, Katsuyuki; Shiota, Takashi; Kitatani, Takeshi
85

Performance and Reliability Investigations of Waveguide-Integrated Photodetectors

Autoren:
Kroh, Marcel; Beling, Andreas; Trommer, Dirk; Margraf, Michael; Unterbörsch, Günter
86

Refractive index contributions to phase shifting in InP based 30 GHz bandwidth n-i-n Mach-Zehnder Modulators

Autoren:
O'Callaghan, James R.; Roycroft, Brendan; Guo, Wei-Hua; Lu, Q. Y.; Daunt, Chris; Daunt, Chris; Donegan, John; Peters, Frank H.; Peters, Frank H.; Corbett, Brian
87

High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor

Autoren:
Yatskiv, R.; Grym, J.; Zdansky, K.; Piksova, K.
88

High Speed InP/InGaAs Uni-Traveling-Carrier Photodiodes with Dipole-Doped InGaAs/InP Absorber-Collector Interface

Autoren:
Wang, H.; Mao, S.
89

On the remarkable morphological organization of homoepitaxial MOVPE InP films

Autoren:
Gocalinska, A.; Manganaro, M.; Pelucchi, E.
90

High-speed and high-power InGaAs/InP photodiode

Autoren:
Yang, Hua; Daunt, Chris; Daunt, Chris; Lee, Kohsin; Han, Wei; Gity, Farzan; Corbett, Brian; Peters, Frank H.; Peters, Frank H.
91

Improvement of Breakdown and DC-to-Pulse Dispersion Properties in Field-Plated InGaAs-InAlAs pHEMTs

Autoren:
Saguatti, Davide; Isa, Muammar Mohamad; Ian, Ka Wa; Chini, Alessandro; Verzellesi, Giovanni; Fantini, Fausto; Missous, Mohamed
92

Structural evaluation of InGaAs/GaAsP multiple quantum wells via in-situ wafer’s curvature measurement and ex-situ X-ray diffraction

Autoren:
Sodabanlu, H.; Ma, S. J.; Watanabe, K.; Sugiyama, M.; Nakano, Y.; Nakano, Y.
93

Uniform BCB Bonding Process Toward Low Propagation Loss in GaInAsP Photonic Wire Waveguide on Si Wafer

Autoren:
Maeda, Yasuna; Lee, Jieun; Atsumi, Yuki; Nishiyama, Nobuhiko; Arai, Shigehisa; Arai, Shigehisa
94

Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High Indium Composition Transit Layers

Autoren:
Teranishi, A.; Shizuno, K.; Suzuki, S.; Asada, M.; Sugiyama, H.; Yokoyama, H.
95

Photoluminescence peak wavelength behavior of InAs/InGaAsP/InP quantum dots structure

Autoren:
Fukuda, Ayako; Esaki, Miyuki; Akimoto, Mio; Imai, Hajime
96

Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric

Autoren:
Morassi, Luca; Verzellesi, Giovanni; Pavan, Paolo; Veksler, Dmitry; Ok, Injo; Zhao, Han; Lee, Jack C.; Bersuker, Gennadi
97

Design Improvements for InP-Based 90deg-Hybrid OEICs for 100GE Coherent Frontends

Autoren:
Kunkel, R.; Ortega-Moñux, A.; Bach, H.-G.; Zhang, R.; Hoffmann, D.; Schmidt, D.; Schell, M.; Romero-García, S.; Molina-Fernandez, I.; Halir, R.
98

Annealing-induced structural changes in TlInGaAsN heterostructures studied by X-ray photoelectron spectroscopy

Autoren:
Kim, K. M.; Kim, W. B.; Krishnamurthy, D.; Ishimaru, M.; Kobayashi, H.; Hasegawa, S.; Asahi, H.
99

Application of HICUM/L0 to InP DHBTs using single-transistor parameter extraction

Autoren:
Nardmann, Tobias; Lehmann, Steffen; Schröter, Michael; Schröter, Michael; Driad, Rachid
100

Single mode TEM00 large diameter electrically pumped external-cavity VCSEL devices on electroplated gold substrate

Autoren:
Laurain, A.; Michon, A.; Garnache, A.; Beaudoin, G.; Roblin, C.; Cambril, E.; Sagnes, I.
101

Heteroepitaxial bonding of GaInAs quantum wells on Si: a new approach towards photonic integration on Si for devices operating at 1.55micrometer

Autoren:
Talneau, A.; Chouteau, D.; Mauguin, O.; Largeau, L.; Sagnes, I.; Patriarche, G.
102

Strain Effects on Performance of AlGaInAs/InP Single Quantum Well Lasers

Autoren:
Sapkota, Durga Prasad; Kayastha, Madhu Sudan; Wakita, Koichi
103

Strain control using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs structure

Autoren:
Hirooka, M.; Kawashima, F.; Iwane, Y.; Saegusa, T.; Shimomura, K.
104

High Performance Submicron RTD Design for mm-Wave Oscillator Applications

Autoren:
Kamgaing, A. Tchegho; Muenstermann, B.; Geitmann, R.; Benner, O.; Blekker, K.; Prost, W.; Tegude, F. J.
105

Self-Aligned Ohmic Contact Scheme to InGaAs Using Epitaxial Ge Growth

Autoren:
Firrincieli, Andrea; Vincent, B.; Firrincieli, Andrea; Waldron, N.; Simoen, E.; Claeys, C.; Claeys, C.; Kittl, J.
106

InP-Based Self-Aligned Internally Series-Connected RTD/HBT for Threshold Gate ICs

Autoren:
Park, Jaehong; Lee, Jongwon; Lee, Jooseok; Jeong, Yongsik; Yang, Kyounghoon
107

GHz-level Operation of a Compact RTD-based CNN Basic Cell

Autoren:
Lee, Jongwon; Lee, Jooseok; Yang, Kyounghoon
108

100nm-gate-Iength In0.47Ga0.53As multi-gate MOSFET: fabrication and characterisation

Autoren:
Mo, J. J.; Wichmann, N.; Roelens, Y.; Zaknoune, M.; Desplanque, L.; Wallart, X.; Bollaert, S.
109

A Compact High-Speed RTD-based Reconfigurable Logic Gate

Autoren:
Lee, Jooseok; Lee, Jongwon; Yang, Kyounghoon
110

Preliminary results of storage accelerated aging test on InP/GaAsSb DHBT

Autoren:
Koné, G. A.; Ghosh, S.; Grandchamp, B.; Maneux, C.; Marc, F.; Labat, N.; Zimmer, T.; Maher, H.; Bourqui, M. L.; Smith, D.
111

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

Autoren:
Maher, H.; Delmouly, V.; Rouchy, U.; Renvoise, M.; Frijlink, P.; Smith, D.; Zaknoune, M.; Ducatteau, D.; Avramovic, V.; Scavennec, A.; Godin, J.; Riet, M.; Maneux, C.; Ardouin, B.
112

Characterization of thin film resistors and capacitors integrated on GaAs membranes for submillimeter wave circuit applications

Autoren:
Zhao, Huan; Zhao, Huan; Do, Thanh Ngoc Thi; Do, Thanh Ngoc Thi; Sobis, Peter; Sobis, Peter; Sobis, Peter; Tang, Aik-Yean; Tang, Aik-Yean; Yhland, Klas; Yhland, Klas; Stenarson, Jörgen; Stenarson, Jörgen; Stake, Jan; Stake, Jan
113

High Output Power (~400 f..lW) Oscillators at Around 550 GHz Using Large Area RTD and Optimized Antenna Structure

Autoren:
Shiraishi, M.; Shibayama, H.; Ishigaki, K.; Suzuki, S.; Asada, M.; Sugiyama, H.; Yokoyama, H.
114

X-ray diffraction characterization of polycrystalline InP films grown by molecular-beam deposition: Estimation of stacking-fault probability

Autoren:
Kajikawa, Y.; Iseki, Y.; Matsui, Y.
115

Extended X-ray absorption fine structure of InAsPSb

Autoren:
Wu, Chen-Jun; Tsai, Gene; Feng, Zhe-Chuan; Lin, Hao-Hsiung; Lin, Hao-Hsiung
116

Single Wavelength (Non-Grating) High-Mesa Asymmetric Active-MMI All Optical Bi-Stable Laser Diodes

Autoren:
Jiang, H.; Chaen, Y.; Hagio, T.; Tsuruda, K.; Jizodo, M.; Matsuo, S.; Hamamoto, K.
117

8-channel AWG-based multiwavelength laser fabricated in a multi-project wafer run

Autoren:
Lawniczuk, K.; Lawniczuk, K.; Piramidowicz, R.; Szczepanski, P.; Szczepanski, P.; Williams, P. J.; Wale, M. J.; Smit, M. K.; Leijtens, X. J. M.
118

Nanostructuring of InP by colloidal lithography and ICP etching for photovoltaic applications

Autoren:
Naureen, Shagufta; Rajagembu, Perumal; Sanatinia, Reza; Shahid, Naeem; Li, Mingyu; Anand, Srinivasan
119

High quality photonic crystal waveguide filters based on mode-gap effect

Autoren:
Shahid, Naeem; Naureen, Shagufta; Li, Mingyu; Swillo, Marcin; Anand, Srinivasan
120

Structural characterisation of GaP/Si nanolayers

Autoren:
Guo, W.; Thanh, T. Nguyen; Elias, G.; Létoublon, A.; Cornet, C.; Ponchet, A.; Bondi, A.; Rohel, T.; Bertru, N.; Robert, C.; Durand, O.; Micha, J. S.; Corre, A. Le
121

FT-DLTS studies on deep levels in InAs quantum dashes grown on InP

Autoren:
Zouaoui, Mouna; Regreny, Philippe; Ajjel, Ridha; Girard, Philippe; Gendry, Michel; Bremond, Georges

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