VDE/VDI-Gesellschaft Mikroelektronik Mikrosystem- und Feinwerktechnik (GMM) (Hrsg.)

ICPT 2012

International Conference on Planarization/CMP Technology October, 15 -17, 2012, Grenoble, France

2012, 420 Seiten, 170 x 240 mm, Festeinband
ISBN 978-3-8007-3452-8
Beigefügt: CD
Persönliche VDE-Mitglieder erhalten auf diesen Titel 10% Rabatt

Inhaltsverzeichnis

As the result of increased co-operation between local CMP users groups in Europe, Japan, Korea, Taiwan, and the United States of America, the International Conference on Planarization/CMP Technology ICPT has been established as the most respected annual gathering on this topic.
The ICPT program 2012 covers the following topical interests
- front-end dielectrics
- front-end metals
- equipment, endpoint and control
- 3D, TSV & MEMS
- consumables metrology
- fundamentals
- new CMP applications
- consumables

1

Slurry selectivity influence on STI and POP processes for RMG application

Autoren: Euvrard, C.; Perrot, C.; Seignard, A.; Dettoni, F.; Rivoire, M.

2

CMP process development for high mobility channel materials

Autoren: Ong, Patrick; Gillot, Christophe; Ansar, Sheik; Noller, Bastian

3

Scratch Reduction by using Nano-colloidal Ceria Slurry with Multiselectivity of SiO2/Si3N4/Poly-Si Films in STI-CMP

Autoren: Kang, Hyun-Goo; Koh, Jeong-Deog; Han, Seung-Woo; Lee, Jin Won; Lee, Byoun-Gki; Pyi, Seung- Ho; Lee, Byung-Seok; Kim, Jin-Woong; Reiss, Brian; Jeong, Jae-Deok; Nam, Chul-Woo; Jang, Ju-Yeon; Choi, Kyo-Se; Dysard, Jeffrey; Woodland, Daniel

4

Performance of a Novel Slurry Injection System on an Ebara F-REX200® Polisher for a Silicon Dioxide CMP Application

Autoren: Borucki, Leonard; Zhuang, Yun; Sampurno, Yasa; Philipossian, Ara; Kreutzer-Schneeweiss, Sascha

5

Buried Tungsten Metal Gate Formation with Chemical Mechanical Polishing Technique and Involved Issues

Autoren: Hwang, Kyungho; Kwon, Hyuk; Kim, Hyunghwan; Kang, Hyosang

6

7

Innovative Barrier CMP Process: Benefit of High Selective Approach on Morphological and Electrical Performances

Autoren: Robin, O.; Nemouchi, F.; Charrion, E.; Hinsinger, O.; Galpin, D.; Rivoire, M.

8

Planarization Efficiency of Copper Protrusion

Autoren: Lin, Jie; Poutasse, Charles A.

9

Direct Polish STI HSS CMP with Improved Planarity and Defect Performance

Autoren: Iyer, A.; Yang, T.; Li, T.; Diao, J.; Lee, C. H.; Leung, G.; Osterheld, T.

10

Chemical Mechanical Planarization (CMP) In-Situ pad groove monitor through Fault Detection and Classification (FDC) system

Autoren: Del Monaco, S.; Calderone, F.; Fritah, M.; Tiec, T. Le; Laurent, A.

11

Global Thickness Measurement System for Metal Layer on Wafer

Autoren: Yu, Qiang; Zhao, Dewen; Li, Hongkai; Qu, Zilian; Qian Zhao; Lu, Xinchun; Meng, Yonggang

12

Haze used as wafer, die and intra-die indirect characterization technique for advanced CMP processes on patterned wafers

Autoren: Dettoni, F.; Beitia, C.; Euvrard, C.; Morand, Y.; Gaillard, S.; Hinsinger, O.; Bertin, F.; Rivoire, M.

13

Feature analysis and simulation of optical endpoint traces in tungsten CMP

Autoren: Mazzone, Giovanni; Gianni, Davide M.; Bano, Giuseppe; Castelletti, Luca

14

Cu Layer thickness monitoring in CMP process by using eddy current sensor

Autoren: Qu, Zilian; Zhao, Qian; Yu, Qiang; Zhao, Dewen; Li, Hongkai; Lu, Xinchun; Meng, Yonggang

15

STI CMP stop in Silicon Nitride controlled by FullVision™ endpoint

Autoren: Perrot, C.; Pitard, F.; Cui, S.; Lam, G.; Del Medico, S.; Bennett, D.; Gaillard, S.; Hinsinger, O.

16

In Situ Profile Control with Titan Edge™ Heads for Dielectric Planarization of Advanced CMOS Devices

Autoren: Dhandapani, S.; Qian, J.; Cherian, B.; Menk, G.; Garretson, C.; Lee, H.; Bennett, D.; Osterheld, T.

17

Reduction of Edge Exclusion by EPC ring in CMP process

Autoren: Park, Yeongbong; Lee, Youngkyun; Yuh, Minjong; Jeong, Haedo

18

Development of linear roll CMP system for large area micropatterns

Autoren: Kim, Seongsoo; Kim, Jiyoon; Lee, Changsuk; Jeong, Haedo

19

Smart pad dressing for double-side polishing

Autoren: Kanzow, J.; Werth, S.; Mörsch, G.

20

21

Particle Reduction in W-CMP Process through Optimizing Post Cleaner

Autoren: Kim, Nam Yun; Kim, Kuen Byul; Jang, Young Seok; Lee, Jae Chang; Hong, Jin Suk; Baek, Kye Hyun; Kim, Hee Seok; Cho, Han Ku

22

The Synergetic Effect of Polishing Debris Cleaning in Real-time

Autoren: Kim, Hojoong; Kim, Mingu; Qin, Hongyi; Yang, Ji Chul; Lim, Donghyun; Choi, Hoomi; Kim, Taesung

23

Development of new copper post-CMP cleaning solutions that allow direct bonding

Autoren: Ouerd, Aziz; Dulphy, Hervé; Lelièvre, Vincent; Cioccio, Léa Di; Rivoire, Maurice

24

Interferometry: a direct die level characterization technique

Autoren: Dettoni, F.; Beitia, C.; Morand, Y.; Euvrard, C.; Balan, V.; Peak, J.; Gaillard, S.; Hinsinger, O.; Bertin, F.; Rivoire, M.

25

FullVision™ Endpoint for CMP of SiGe Fin Structures

Autoren: Menk, G.; Dhandapani, S.; Huang, Y.-C.; Wood, B.; Qian, J.; Cherian, B.; Garretson, C.; Osterheld, T.

26

CMP Defect Monitoring in HKMG Loop on Monitor Wafers

Autoren: Peng, Ren; Hsu, Chun Wei; Hsieh, Duckblood; Lin, Welch; Huang, Climbing; Wu, JY; Palamadai, Chandar; Sapre, Prasanna; Chang, Timothy; Wang, Tony; Huang, Eros; Cheng, Harvey; Hu, Debbie

27

28

CMP Process Optimization for Bonding Applications

Autoren: Balan, Viorel; Seignard, Aurélien; Scevola, Daniel; Lugand, Jean-François; Di Cioccio, Léa; Rivoire, Maurice

29

Process Optimization of Grinding and CMP for Thinning of Si

Autoren: Feeney, Paul; Shumway, Lynn

30

Influence of different anneal processes on copper surfaces pre - and post - CMP

Autoren: Rudolph, C.; Wachsmuth, H.; Bartusseck, I.; Dobritz, S.; Grafe, J.; Boettcher, M.; Wolf, M. J.

31

TSV CMP Process Development and Pitting Defect Reduction

Autoren: Lin, Paul-Chang; Xu, Jinhai; Li, Pei; Ding, Yujie; Ma, Zhiyong; Xing, Charles; Jing, Judy; Wang, Yuchun

32

Advances in CMP for TSV Reveal

Autoren: Rhoades, Robert L.; Malta, Dean

33

Application of an Abrasive-Free Cu Slurry for MEMS Devices

Autoren: Steible, Benjamin; Stoldt, Michael; Tack, Michael; Zwicker, Gerfried

34

35

Identification of Nonlinear Viscoelasticity of Polishing Pad Using an On- Machine Compression Tester

Autoren: Suzuki, Norikazu; Asaba, Masakazu; Hashimoto, Yohei; Shamoto, Eiji

36

Additive/Abrasive Interactions in Solution: Investigation of the Surface Chemistry and Adsorption Behaviour of CMP Abrasives

Autoren: England, Ashley N.; Rawat, Ashwani; Moinpour, Mansour; Remsen, Edward E.

37

38

Effect of Slurry Chemistry on W CMP Performance

Autoren: Kang, Mincheol; Kim, Kyungbo; Jung, Taeyeon; Park, Hyungsoon; Kim, Hyunghwan; Kang, Hyosang

39

Microreplicated Pad Conditioner for Copper Barrier CMP Applications

Autoren: Zabasajja, John; Le-huu, Duy; Gould, Charles

40

CVD Diamond-Coated CMP Polishing Pad Conditioner With Asperity Height Variation

Autoren: Choi, Joo Hoon; Lee, Yong Bin; Kim, Byung Ki

41

Chemical Mechanical Polishing Slurry for Aluminum Substrate

Autoren: Wang, Liangyong; Liu, Weili; Song, Zhitang

42

Surface adsorption mechanism of water-soluble polymer in polishing slurry

Autoren: Tsuchiya, Kohsuke; Takahashi, Shuhei; Kubo, Megumi; Morinaga, Hitoshi

43

Oxide Rate and Selectivity as a Function of Pad Chemistry,

Autoren: Renteln, Peter; Hsu, Oscar

44

Slurry Development for Copper/Barrier CMP

Autoren: Zhang, Baoguo; Liu, Yuling

45

CMP Evaluation of Reusable Polishing Pad using Auxiliary Plate

Autoren: Daventure, Nicolas; Del Monaco, Silvio; Suzuki, Tatsutoshi; Balan, Viorel; Rivoire, Maurice

46

Role of Abrasive Type and Media Surface Energy on Nanoparticle Adsorption

Autoren: Kaiser, Jordan; Streit, Michael; Connor, Patrick; Levy, Patrick; Keleher, Jason J.

47

The Synthesis of PS-Si02 Raspberry Structure Nanopartide for CMP Slurry

Autoren: Qin, Hongyi; Kim, Hojoong; Choi, Hoomi; Kim, Mingu; Kim, Taesung

48

The Study of POU Filters Performance and Life-time in the CMP Slurry Supply System

Autoren: Jang, Sunjae; Lim, Donghyun; Ji Chul Yang; Kim, Hojoong; Nam, Miyeon; Kim, Taesung

49

50

The Study to Minimize the Variation of Polishing Time According to the Pad Used Time

Autoren: Yang, Ji Chul; Jang, Won Moon; Won, Jae-Hyung

51

Determination of Adhesion Force of Particles on Substrate Surface using Atomic Force Microscopy

Autoren: Shin, Woonki; An, Joonho; Kim, Jiyoon; Jeong, Haedo

52

Investigation on Analysis and Design of Pad Conditioning Process in Double Side Polishing

Autoren: Lee, Sangjik; Kim, Hyoungjae; Lee, Hyunseop; Jeong, Haedo

53

54

55

Processing Properties of Strong Oxidizing Slurry and Effect of Processing Atmosphere in SiC-CMP

Autoren: Yin, Tao; Doi, Toshiro; Kurokawa, Syuhei; Ohnishi, Osamu; Yamazaki, Tsutomu; Wang, Zhida; Tan, Zhe

56

A Study on the Damaged Layer Characteristic of Wafer by using Chemical-Mechanical Polishing

Autoren: Park, Chuljin; Jeon, Minhyon; Lee, Sangjik; Kim, Doyeon; Lee, Taekyung; Kim, Hyoungjae

57

58

Slurry Abrasive Particle Agglomeration Experimentation and Modeling for Chemical Mechanical Planarization (CMP)

Autoren: Johnson, Joy M.; Boning, Duane S.; Kim, Gwang-Soo; Safier, Paul; Knutson, Karson

59

Tribological, Thermal, and Kinetic Attributes of 300 vs. 450 mm Chemical Mechanical Planarization Processes

Autoren: Jiao, Yubo; Liao, Xiaoyan; Wu, Changhong; Zhuang, Yun; Sampurno, Yasa; Theng, Siannie; Godlstein, Michael; Philipossian, Ara

60

Development of chemical mechanical polishing process for carbon nanotube interconnects on 300 mm wafer

Autoren: Ito, Ban; Nishide, Daisuke; Matsumoto, Takashi; Katagiri, Masayuki; Saito, Tatsuro; Wada, Makoto; Watanabe, Masahito; Sakuma, Naoshi; Kajita, Akihiro; Sakai, Tadashi

61

Chemical-Mechanical Planarization of Aluminium Damascene Structures

Autoren: Künzelmann, U.; Mueller, M. R.; Kallis, K. T.; Schuette, F.; Menzel, S.; Engels, S.; Fong, J.; Lin, C.; Dysard, J.; Bartha, J. W.; Knoch, J.

62

The effect of H2O2 and Ammonia sulfate on the CMP of Molybdenum

Autoren: Chen, Fei; Zeng, Xu; Xu, Jing-Bo; Lu, Hai-Sheng; Qu, Xin-Ping

63

Study on Polishing Properties for Phase Change Memory

Autoren: Bae, Jinwoo; Lee, Wonjun; Park, Seungho; Lee, Jae-Dong; Hwang, Inseak; Nam, Seok-Woo

64

Biomaterials Applications of Chemical Mechanical Polishing

Autoren: Basim, G. Bahar; Ozdemir, Zeynep; Mutlu, Ozal

65

Correlation of Polishing Pad Property and Pad Debris on Scratch Formation during CMP

Autoren: Kwon, Tae-Young; Cho, Byoung-Jun; Venkatesh, R. Prasanna; Park, Jin-Goo

66

67

Low Surface Roughness Epic™ D2xx soft pads for CMP Applications

Autoren: Nair, Jay; Lu, Shaoning; Page, Joseph; Bigoin, Gilles; Sun, Fred; Gaudet, Greg

68

Evaluation of Glass Lapping using Fixed Abrasive Pad

Autoren: Kim, Hyuk-Min; Manivannan, R.; Moon, Deog-Ju; Kwon, Tae-Young; Noh, Jin-Hyeong; Park, Jin-Goo

69

Challenges of CMP Consumables Metrology

Autoren: Tregub, A.; Rawat, A.