Cover IEC 62979:2017

IEC 62979:2017

Photovoltaic modules - Bypass diode - Thermal runaway test

Circulation Date: 2017-08
Edition: 1.0
Language: EN - english
Seitenzahl: 13 VDE Artno.: 224778


IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.