Eichfelder, M.; Rossbach, R.; Jetter, M.; Michler, P. (Institut für Strahlenphysik, Universität Stuttgart, Allmandring 3, 70569 Stuttgart, Germany)
In this paper we discuss the potential and the possible limitations of the AlGaInP material system and its consequences for laser applications in vertical-cavity surface-emitting lasers (VCSEL). Epitaxial and technological solutions were presented to overcome some parts of the inherent problems. Measurements of internal heating of oxide-confined 660 nm AlGaInP-VCSEL are compared with calculated data by a cylindrical heat dissipation model to improve the heat removal out of the device. Pulsed lasing operation of a 660 nm VCSEL at +140deg C heatsink temperature is demonstrated, where we exceeded more than 0.5 mW and at 170deg C more than 0.1 mW output power was achieved. Continuous-wave measurements of our 660 nm devices show laser emission at 65deg C with an optical output power over 0.1 mW and operating times of more than 2000 hours without spontaneous failure.