Sayed, Ahmed; Tanany, Ahmed Al; Boeck, Georg (Microwave Engineering, Berlin University of Technology)
We present in this paper a linear 20 W broadband power stage based on GaN HEMT. An efficient procedure has been used to optimize the broadband performance. Source/Loadpull technique has been applied to extract the optimum source and load impedances for maximum output power. Power losses due to both matching and biasing networks have been minimized as well. At VDS = 50 V and IDS = 850 mA, the design provides a frequency range from 200 MHz to 3 GHz with a gain of 11±1.5 dB and P1dB output power and PAE greater than 20 W and 25 %, respectively. Linearity performance based on two-tone technique has been analyzed resulting in an output IP3 of = 50 dBm over the full bandwidth at a frequency spacing of 100 kHz. Design procedure, simulation and first measured results are presented in this paper.