High Power Doherty Amplifier Design for UMTS Application

Conference: GeMIC 2008 - German Microwave Conference
03/10/2008 - 03/12/2008 at Hamburg-Harburg, Germany

Proceedings: GeMIC 2008

Pages: 4Language: englishTyp: PDF

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Markos, Asdesach Z.; Kompa, Günter (University of Kassel, Department of High Frequency Technique (HFT), Wilhelmshöher Allee 73, D-34121 Kassel, Germany)

PA) using laterally diffused metal oxide semiconductor (LDMOS) technology is presented. A low impedance thru-reflect-line (TRL) calibration technique has been used to characterize the device and verify the large signal model of a commercial 10W packaged LDMOS device. A Doherty amplifier is designed using two of the 10W LDMOS devices as class AB main amplifier and class C peaking amplifier. A peak power added efficiency (PAE) of 52% (59% drain efficiency) and 45% has been simulated at the saturated output power of 43 dBm and 6 dB back off, respectively.