Demonstrator of Class-S Power Amplifier based on GaN transistors
Conference: GeMIC 2008 - German Microwave Conference
03/10/2008 - 03/12/2008 at Hamburg-Harburg, Germany
Proceedings: GeMIC 2008
Pages: 4Language: englishTyp: PDF
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Authors:
Samulak, Andrzej; Weigel, Robert (Lehrstuhl für Technische Elektronik, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Germany)
Fischer, Georg (Alcatel-Lucent, Bell Labs Europe, 90411 Nürnberg, Germany)
Abstract:
A realized demonstrator of a Class-S Power Amplifier based on GaN transistors is presented. An input signal is prepapred externally in simulative way (ADS, Matlab) and is based on a 4th order Bandpass Δ-Σ modulator definition, and FPGA board is engaged as a signal generator. The demonstrator is based on a Current Switching Class D (CSCD) topology. The presented solution offers an output power of at least 37 dBm (depends on supply voltage). Module efficiency is 20% (30% drain efficiency respectively) for full scale 3GPP Δ-Σ input signal. Center frequency is fixed at 225 MHz, but analyses and measurements requires wider bandwidth.