Application Rules for Accurate IMD Characterization in GaN HEMTs
Conference: GeMIC 2008 - German Microwave Conference
03/10/2008 - 03/12/2008 at Hamburg-Harburg, Germany
Proceedings: GeMIC 2008
Pages: 4Language: englishTyp: PDF
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Authors:
Srinidhi, E. R.; Ma, R.; Kompa, G. (University of Kassel, Fachgebiet Hochfrequenztechnik, Wilhelmshöher Allee 73, D-34121 Kassel, Germany)
Abstract:
This paper presents a fully calibrated 2-channel frequency-domain measurement setup using VSA as receiver for characterizing nonlinear RF devices. This characterization system enables the acquisition and vector error-correction of complex traveling waves at the DUT reference plane. As an application example, 3.2 mm GaN HEMT is characterized under 2-tone and W-CDMA excitation. Influence of DC feed in device distortion behavior has been deeply investigated. Further, based on the experimental analysis, a simple bias tee is designed which can overcome improper DC feed conditions and tested through drain bias sensing on 0.5 mm GaN HEMT.