Flucke, J.; Heymann, P.; Liero, A.; Heinrich, W. (Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), 12489 Berlin / Germany)
Packaging is a key issue of any microwave power transistor. In this paper, we investigate the package-related effects for a 50W GaN-HFET. This includes design of a suitable test fixture and the respective calibration and deembedding. Example measurements of linear and nonlinear parameters of packaged broadband devices are presented.