A Study of Pressed Contact Technology on IGBT Devices between -40°C and +200°C

Conference: CIPS 2008 - 5th International Conference on Integrated Power Electronics Systems
03/11/2008 - 03/13/2008 at Nuremberg, Germany

Proceedings: CIPS 2008

Pages: 5Language: englishTyp: PDF

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Banckaert, Guillaume; Mermet-Guyennet, Michel (ALSTOM- Transport, Power Electronics Associated Research Laboratory (PEARL), France)
Castellazzi, Alberto (Swiss Federal Institute of Technology, Zurich (ETH Zurich), Integrated Systems Laboratory, Switzerland)

We present the results of an electro-thermal characterization based on experimental analysis and finite element simulation. The study considers both devices with bottom solder layer (i.e., with press contact on chip surface only) and without any soldering layer at all (i.e., with press contact on both sides). The main objective is to assess the validity of this technology over the indicated temperature range and to establish an optimum pressure value.