Design of Class F-1 Power Amplifier Using GaN pHEMT for Industrial Applications
Conference: GeMiC 2009 - German Microwave Conference
03/16/2009 - 03/18/2009 at München, Germany
Proceedings: GeMiC 2009
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Tanany, Ahmed Al; Sayed, Ahmed; Boeck, Georg (Microwave Engineering Lab, Berlin Institute of Technology, Einsteinufer 25, 10587 Berlin, Germany)
This work presents a Class F-1 power amplifier (PA) operating at 2.35 GHz. An output power of 40 W (46 dBm) was achieved with 10 dB gain. The maximum drain efficiency was measured to be 60.8 % (PAE = 55.7 %). The power amplifier was implemented using GaN pHEMT. The realization of the optimum load resonator was designed by a microstrip resonator, for the first four harmonics. The resonator achieves an optimum load for the transistor at the fundamental frequency.