Improving yield and cycle time at the inspection process by means of a new defects disposition technique
Conference: EMLC 2009 - 25th European Mask and Lithography Conference
01/12/2009 - 01/15/2009 at Dresden, Germany
Proceedings: EMLC 2009
Pages: 13Language: englishTyp: PDF
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Authors:
Villa, Ernesto; Sartelli, Luca; Miyashita, Hiroyuki (DNP Photomask Europe Spa, via C. Olivetti 2 20041 Agrate Brianza (MI) Italy)
Sundermann, Frank; Gough, Stuart; Dufaye, Felix (STMicroelectronics, 850 rue Jean Monnet 38926 Crolles France)
Sippel, Astrid (KLA-Tencor SARL, 32bis, (Parc de Busserolles), Chemin du Vieux Chêne 38240 Meylan France)
Abstract:
The paper describes a new approach of evaluating isolated opaque defects, as well as CD-like defects on hole layer, using features available on the inspection tool. This eliminates further verifications on specific tools, which would result in their overloading and in time consuming, with a potential negative impact on the delivery time of any product going through such processes. In the first case the method consists of associating the effect of a cluster of assist bars to that of isolated opaque defects, considering their size and position on the layout of the mask. In case of CD-like defects on holes the evaluation is based on a thorough characterization of the performance of the Litho2 detector of the Terascan T576 and its further verification with the AIMS readings.