1.55 µm InP-based Short-Cavity-VCSELs with Enhanced Modulation-Bandwidth of 15 GHz

Conference: ECOC 2009 - 35th European Conference on Optical Communication
09/20/2009 - 09/24/2009 at Vienna, Austria

Proceedings: ECOC 2009

Pages: 2Language: englishTyp: PDF

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Müller, M.; Böhm, G.; Amann, M. C. (Walter Schottky Institut, Technische Univeristät München, Am Coulombwall 3, 85748 Garching, Germany)
Hofmann, W. (Dept. of Electrical Engineering and Computer Sciences, University of California at Berkeley, CA 94720, USA)
Rosskopf, J.; Rönneberg, E.; Ortsiefer, M. (VERTILAS GmbH, Lichtenbergstr. 8, 85748 Garching, Germany)

InP-based burried tunnel junction VCSELs incorporating a novel short-cavity design are presented. These devices show record-high modulation-bandwidths in excess of 15 GHz together with greatly enhanced intrinsic resonance-frequencies. Intrinsic damping is improved due to reduced photon-lifetime.