Very Low Dark Current AlInAs/GaInAs SAGM Avalanche Photodiodes for 10Gb/s applications
Conference: ECOC 2009 - 35th European Conference on Optical Communication
09/20/2009 - 09/24/2009 at Vienna, Austria
Proceedings: ECOC 2009
Pages: 2Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Lahrichi, M.; Derouin, E.; Carpentier, D.; Lagay, N.; Decobert, J.; Glastre, G.; Achouche, M. (Alcatel Thales III-V Lab, joint lab: Bell Labs and Thales Research & Technology, Route de Nozay, 91460 Marcoussis, France)
We report a planar AlInAs/GaInAs APD presenting simultaneously the lowest multiplied dark current ever reported (IdM=0.19nA), a responsivity of 0.9A/W (at M=1), a very low noise (F(M=10)=3.3), and a high gainxbandwidth (150GHz).