Very Low Dark Current AlInAs/GaInAs SAGM Avalanche Photodiodes for 10Gb/s applications

Conference: ECOC 2009 - 35th European Conference on Optical Communication
09/20/2009 - 09/24/2009 at Vienna, Austria

Proceedings: ECOC 2009

Pages: 2Language: englishTyp: PDF

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Lahrichi, M.; Derouin, E.; Carpentier, D.; Lagay, N.; Decobert, J.; Glastre, G.; Achouche, M. (Alcatel Thales III-V Lab, joint lab: Bell Labs and Thales Research & Technology, Route de Nozay, 91460 Marcoussis, France)

We report a planar AlInAs/GaInAs APD presenting simultaneously the lowest multiplied dark current ever reported (IdM=0.19nA), a responsivity of 0.9A/W (at M=1), a very low noise (F(M=10)=3.3), and a high gainxbandwidth (150GHz).