1200 V 6 A SiC BJTs with very low V(CESAT) and fast switching

Conference: CIPS 2010 - 6th International Conference on Integrated Power Electronics Systems
03/16/2010 - 03/18/2010 at Nuremberg, Germany

Proceedings: CIPS 2010

Pages: 5Language: englishTyp: PDF

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Lindgren, Anders; Domeij, Martin (Transic, Kista, Sweden)

This paper reports measurements and simulations made on 1200V 6A Silicon carbide (SiC) bipolar junction transis-tors. A SPICE model for the transistor has been developed and verified by static and dynamic measurements. Fast switching and low on state losses have been measured and SPICE simulated on the component level. To further describe the impact on a systems level a simplified boost converter has been simulated with regards to power losses and cooling.