Fabrication of Sub-500 nm Source and Drain Electrodes for Organic Field Effect Transistor using UV Nanoimprint Lithography with Low-Cost Silicon Mold and Lift-Off Process

Conference: Mikro-Nano-Integration - 3. GMM-Workshop
03/03/2011 - 03/04/2011 at Stuttgart, Deutschland

Proceedings: Mikro-Nano-Integration

Pages: 6Language: englishTyp: PDF

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Teng, Lichao; Kirchner, Robert; Plötner, Matthias; Jahn, Andreas; He, Jian; Fischer, Wolf-Joachim (Institute of Semiconductor and Microsystems Technology (IHM), Technische Universität Dresden, Germany)
Kirchner, Robert; Fischer, Wolf-Joachim (Fraunhofer Institute for Photonic Microsystems (IPMS), Dresden, Germany)
Hagemann, Falk (SAW-Components, Dresden, Germany)

Gold source and drain electrodes for organic field effect transistors were developed by using UV-based nanoimprint lithography and a lift-off process. To reduce mold costs, an opaque silicon nanoimprint-mold was used instead of well known, but expensive quartz molds. This new technique, called non-transparent UV nanoimprint lithography, can be applied due to indirect light propagation. Finally, source and drain electrodes with gaps down to 500 nm for organic field effect transistors were sucessfully fabricated in this work.