Low-Cost 25Gb/s 1300nm Electroabsorption-Modulated InGaAlAs RW-DFB-Laser
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Moehrle, Martin; Przyrembel, Georges; Bornholdt, Carsten; Sigmund, Ariane; Molzow, Wolf-Dietrich; Klein, Holger (Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institute, Einsteinufer 37, 10587 Berlin, Germany)
1300nm EMLs have been realized using an identical InGaAlAs MQW layer stack for the DFB and the EAM section and thus allowing for low fabrication costs. The devices show excellent 25Gb/s and 40Gb/s modulation performance at 50deg C and are therefore well suited to be used in 4x25Gb/s systems.