Low-Threshold 3 µm GaInAsSb/AlGaInAsSb Quantum-Well Lasers Operating in Continuous-Wave up to 64 °C
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Vizbaras, Kristijonas; Andrejew, Alexander; Vizbaras, Augustinas; Grasse, Christian; Arafin, Shamsul (Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85478 Garching, Germany)
Long-wavelength lasers, emitting above 2 µm, are attractive light sources for trace-gas sensing systems with tunable diode-laser absorption spectroscopy (TDLAS). Here, GaSb-based lasers are perfectly suited, as they can cover the spectral range from 2 to 4 µm. Many technologically important gases, such as CO, CO2, CH4, NH3, N2O, etc., have strong absorption lines in this region. The spectral range around 2.9 - 3.0 µm is of specific interest for NH3 and N2O sensing applications. In this work, we present state-of-the-art GaInAsSb/AlGaInAsSb quantum-well (QW) ridge-waveguide lasers emitting around 3 µm. Episide-up mounted devices operate in continuous wave (CW) with very low threshold current densities up to record-high 64 °C heatsink temperature. This is by ~20 °C higher, than the best reported value of 45 °C for episide-down indium-soldered devices at this wavelength range. In pulsed mode devices were operating beyond 80 °C heatsink temperature, limited only by the characterization set-up. Extrapolated pulsed threshold currents at 20 °C for infinite resonator length (L->?) yield 168 A/cm2 for 3 QW active region, corresponding to only 56 A/cm2 per QW. In CW operation the extrapolated (L->?) threshold current was found to be 198 A/cm2, yielding 66 A/cm2 per QW. For this long wavelength range, a very high characteristic temperature (T0) of 43 K was determined in the temperature range of 10 to 60 °C.