InP HBTs for THz Frequency Integrated Circuits

Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany

Proceedings: IPRM 2011

Pages: 4Language: englishTyp: PDF

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Urteaga, M.; Seo, M.; Hacker, J.; Griffith, Z.; Young, A.; Pierson, R.; Rowell, P. (Teledyne Scientific Company, Thousand Oaks, CA, USA)
Skalare, A. (Jet Propulsion Laboratory, Pasadena, CA, USA)
Jain, V.; Lobisser, E.; Rodwell, M. J. W. (Dept. of Electrical and Computer Engineering, University of California, Santa Barbara, USA)

A 0.25micrometer InP DHBT process has been developed for THz frequency integrated circuits. A 0.25x4micrometer2 HBT exhibits an extrapolated ft/fmax of 430GHz/1.03THz at IC =11mA, VCE= 1.8V. The transistors achieve this performance while maintaining a common-emitter breakdown voltage (BVCEO) >4V. Thin-film interconnects and backside wafer processes have been developed to support selected IC demonstrations. The technology has been used to build fundamental oscillators, amplifiers and dynamic frequency dividers all operating at >300GHz. Additionally, increasingly complex circuits such as a full PLL have been demonstrated.