InP Lattice-matched HEMT with Regrown Source/Drain by MOCVD
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDF
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Authors:
Li, Qiang; Li, Ming; Tang, Chak Wah; Lau, Kei May (Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)
Abstract:
In this paper, we report the incorporation of Source/Drain regrowth by MOCVD in InAlAs/InGaAs HEMT on InP substrate. Greatly improved RF performance of the device was observed, compared with standard HEMTs with the same layered structure. 1-µm gate-length device exhibits a 34% improvement of cutoff frequency fT and a 74% improvement of maximum oscillation frequency fmax.