Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition

Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany

Proceedings: IPRM 2011

Pages: 4Language: englishTyp: PDF

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Schleeh, J.; Halonen, J.; Nilsson, B.; Nilsson, P. Å.; Wadefalk, N.; Zirath, H.; Grahn, J. (Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, SE-412 96 Göteborg, Sweden)
Zeng, L. J.; Olsson, E. (Department of Applied Physcis, Chalmers University of Technology, SE-412 96 Göteborg, Sweden)
Ramvall, P. (Solid State Physics, Lund University, Box 118, SE-221 00 Lund, Sweden)

InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al2O3 atomic layer deposition (ALD) demonstrated improved DC performance compared to Si3N4 plasma enhanced chemical vapour deposition (PECVD). DC measurements have been performed on 130 nm gate-length devices before and after passivation. An increase in maximum drain current density of 20% and extrinsic transconductance of 30% were observed after both ALD and PECVD device passivation. In comparison to PECVD passivated InP HEMTs, ALD passivated devices demonstrated a full suppression of a kink in the I-V characteristics associated with surface traps.