High repetition rate two-section InAs/InP Quantum-Dash Passively Mode Locked Lasers
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Rosales, R.; Merghem, K.; Martinez, A.; Ramdane, A. (CNRS Laboratory for Photonics and Nanostructures, Route de Nozay, Marcoussis, France)
Accard, A.; Lelarge, F. (Alcatel-Thales III-V Lab, joint lab of Bell labs and Thales Research & Technology, Route de Nozay, Marcoussis, France)
First observations of 2-section InAs/InP quantum-dash passive mode locking (ML) at fundamental repetition frequencies up to ~ 100 GHz are presented. The effects of gain/absorber section lengths and driving conditions on ML characteristics are systematically investigated.