Improvement of modal gain of InAs/InP Quantum-Dash Lasers
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDF
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Authors:
Merghem, K.; Rosales, R.; Martinez, A.; Patriarche, G.; Ramdane, A. (CNRS Laboratory for Photonics and Nanostructures, Route de Nozay, Marcoussis, France)
Chimot, N.; Dijk, F. van; Moustapha-Rabault, Y.; Poingt, F.; Lelarge, F. (III-V Lab, a joint Laboratory of "Alcatel Lucent Bell Labs", "Thales Research & Technology", and "CEA-LETI", Route de Nozay, 91460 Marcoussis, France)
Abstract:
The optimization of modal gain in InAs/InP quantum-dash based lasers is reported in detail. Using either p-doped 6 dash-in-a-well or undoped 15 dash-in-a-well structures, we demonstrate modal gain up to 60cm-1. This improvement induces an increase of differential gain and therefore leads to high resonance frequency (>10GHz) and low linewidth enhancement factor (<2.5). It opens the way to a further optimization of both quantum-dash stacking and p-doping as well as a proper combination of the two approaches.