III-V on Silicon for High-Speed Electronics and CMOS Photonics
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Takenaka, Mitsuru; Takagi, Shinichi (Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan)
We have proposed III-V CMOS photonics platform on which III-V high-speed electronics and III-V photonics are monolithically integrated by heterogeneous integration of III-V semiconductors on Si. III-V MOSFETs and III-V photonic wire device on Si have been successfully demonstrated by using direct wafer bonding.