ALD Al2O3 Activated Direct Wafer Bonding for III-V CMOS Photonics Platform
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Ikku, Y.; Yokoyama, M.; Iida, R.; Sugiyama, M.; Nakano, Y.; Takenaka, M.; Takagi, S. (Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan)
Atomic layer deposited Al2O3 activated direct wafer bonding has been developed to form III-V on Insulator wafer on Si for III-V CMOS photonics. The surface energy of the bonded interface was improved to be 620 mJ/m2 without any plasma process. The propagation loss of an InGaAsP photonic wire waveguide was also improved to 1.7 dB/mm.