Narrow linewidth 1.55 µm laterally-coupled DFB lasers fabricated using nanoimprint lithography
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Telkkälä, Jarkko; Viheriälä, Jukka; Bister, Mariia; Karinen, Jukka; Dumitrescu, Mihail; Guina, Mircea (Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland)
Melanen, Petri (Modulight Inc, Tampere, Finland)
We report on the use of nanoimprint lithography for the fabrication of InP-based laterally-coupled ridge waveguide distributed feedback laser diodes (LC-DFB LDs) emitting around 1550 nm. This is an important wavelength range for telecommunication and LIDAR applications both requiring narrow linewidth emitters. At room temperature the as-cleaved lasers exhibited a side-mode suppression ratio of 50 dB at an output power of 6 mW. The lasers showed ultra-narrow single-mode spectrum with Lorentzian part of the measured linewidth being ~200 kHz. The results obtained prove nanoimprint lithography suitable for the low-cost manufacturing of high performance single-mode laser diodes.