High-Speed InP-HEMTs: Low-Noise Performance and Cryogenic Operation
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Endoh, Akira; Watanabe, Issei; Mimura, Takashi; Matsui, Toshiaki (National Institute of Information and Communications Technology (NICT), 4-2-1 Nukuikitamachi, Koganei, Tokyo 184-8795, Japan)
Endoh, Akira; Mimura, Takashi (Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan)
We fabricated decananometer-gate InP-based InAlAs/InGaAs high electron mobility transistors (HEMTs) and measured their DC, RF and noise characteristics. We achieved a minimum noise figure NFmin of 1.0 dB at a frequency of 90 GHz, a cutoff frequency fT of 520 GHz and a maximum oscillation frequency fmax of 425 GHz for a 35-nm-gate pseudomorphic HEMT (P-HEMT) under the same bias condition. We also performed DC and RF measurements and Monte Carlo (MC) simulations of P-HEMTs at 300 and 16 K. We confirmed the improvements of DC and RF performance by cooling. The improvements mainly results from the suppression of the intervalley phonon scattering from the Γ valley to the L valley in InGaAs channel layer. Furthermore, we showed the possibility of low-voltage, low-power and high-speed operations of ultra-short-gate P-HEMTs.