Ultra-Low Noise InP pHEMTs for Cryogenic Deep-Space and Radio- Astronomy Applications
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Alt, A. R.; Bolognesi, C. R. (Millimeter-Wave Electronics Group, ETHZ, Gloriastr. 35, Zürich 8092, Switzerland)
Gallego, J. D.; Diez, C.; Lopez-Fernandez, I.; Barcia, A. (Centro Astronómico de Yebes, Guadalajara, Spain)
InP HEMTs provide the best available low-noise transistor performance. The availability of InP HEMTs for cryogenic front-ends is of paramount importance in ultra-low noise Deep-Space Network (DSN) and Radio-Astronomy (RA) applications. In DSN applications, cryo-cooled InP HEMT front-ends are at the heart of the ESA 34 m antennas used to detect data carrying signals and telemetry information from deep space probes, and excellent HEMT noise performances are key to reducing antenna size and cost, as well as to simplifying spacecraft payloads. In RA, very low noise temperatures are required because of the cold cosmic microwave background (~2.73K).