Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 3Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Morassi, Luca; Verzellesi, Giovanni; Larcher, Luca (DISMI, University of Modena and Reggio Emilia, Reggio Emilia, Italy)
Zhao, Han; Lee, Jack C. (Department of Electrical and Computer Engineering, The University of Texas at Austin, TX, USA)
The accuracy of the split-CV mobility extraction method is analyzed in implant-free, buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric through a "simulated experiment" procedure. The different error sources affecting the method accuracy are pointed out. As a result of these errors, the split-CV mobility can appreciably underestimate the actual channel mobility under on-state conditions.