Low-power Consumption and High-eye-margin 10 Gbit/s Operation of Distributed Reflector Laser with Wirelike Active Regions
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Takahashi, Daisuke; Shindo, Takahiko; Shinno, Keisuke; Nishiyama, Nobuhiko; Arai, Shigehisa (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan)
Lee, Seunghun; Amemiya, Tomohiro; Arai, Shigehisa (Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan)
By introducing 5-quantum-well wirelike active regions with thin optical confinement layers, low-power and highspeed operation of GaInAsP/InP distributed reflector (DR) laser with wirelike active regions was realized. A mask test of 10 GbE with a 20% margin was passed with a low bias current of 10 mA and the 3 dB bandwidth of 15 GHz was obtained with the bias current of 28 mA.