Lateral Current Injection Distributed Feedback Laser with Wirelike Active Regions
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Shindo, Takahiko; Futami, Mitsuaki; Osabe, Ryo; Ito, Hitomi; Koguchi, Takayuki; Amemiya, Tomohiro; Nishiyama, Nobuhiko; Arai, Shigehisa (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan)
Okumura, Tadashi; Amemiya, Tomohiro; Arai, Shigehisa (Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan)
One of the promising candidates to solve a problem of a performance limitation of LSI is replacing the electrical global wiring by an on chip optical interconnection. A semiconductor membrane laser, which consists of a high-index contrast waveguide, is expected to operate with ultra low threshold current due to an enhanced modal gain. We have introduced a lateral current injection (LCI) structure for electrically pumped membrane laser, and demonstrate LCI type Distributed feedback (DFB) laser with wirelike active region prepared on a semi-insulating (SI) InP substrate. A threshold current of as low as 11 mA and a stable single-mode operation were obtained for a device with the stripe width of 1.5 µm and the cavity length of 300 µm under a room-temperature continuous-wave (RT-CW) condition.