All-Optical Gating Operation in Hybrid Si/III-V Mach-Zehnder Interferometer
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 2Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Shoji, Yuya; Akimoto, Ryoichi; Kintaka, Kenji; Suda, Satoshi; Kawashima, Hitoshi; Gozu, Shin-ichiro; Mozume, Teruo; Kuwatsuka, Haruhiko; Hasama, Toshifumi; Ishikawa, Hiroshi (Network Photonics Research Center, National Institute of Advanced Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan)
Silicon-on-insulator (SOI) platform allows highly-integrated photonic circuits with CMOS fabrication process. Hybrid integration technologies of Si and III-V materials have been developed in order to realize active functional devices. Intersubband transition (ISBT) in a III-V semiconductor provides ultrafast cross-phase modulation (XPM) between TE probe light and TM pump light. All-optical signal processing have been demonstrated by using Mach-Zehnder interferometer (MZI) switches composed of free-space optics. However, it is difficult to integrate the MZI switch monolithically in the III-V waveguides, because the TM pump light is strongly absorbed by the ISBT excitation at the waveguide edge. In this study, we proposed a hybrid MZI switch of a Si and III-V waveguides for the all-optical switching device.