High Speed InP/InGaAs Uni-Traveling-Carrier Photodiodes with Dipole-Doped InGaAs/InP Absorber-Collector Interface
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 3Language: englishTyp: PDF
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Authors:
Wang, H.; Mao, S. (Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Republic of Singapore)
Abstract:
For uni-traveling carrier photodiodes (UTC-PDs) using InGaAs and InP as the absorber and collector, an abrupt heterojunction at the absorber-collector interface may induce a large degradation of current handling and microwave performance caused by the current blocking effect. In this work, UTC-PDs with dipole doping at the InGaAs/InP interface to suppress the current blocking are demonstrated. By using a dipole-doped InGaAs/InP interface, the use of InGaAsP quaternary for the interface is eliminated, which eases both material growth and device fabrication.