High-speed and high-power InGaAs/InP photodiode
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Yang, Hua; Daunt, Chris; Lee, Kohsin; Han, Wei; Gity, Farzan; Corbett, Brian; Peters, Frank H. (Tyndall National Institute, UCC, Lee Maltings/Cork, Ireland)
Daunt, Chris; Peters, Frank H. (Physics Department, University College Cork, Cork, Ireland)
The. photodiode (PD) is a key component in optical transmission and optical measurement systems. In this paper, we present an InP-based InGaAs Uni-traveling Carrier (UTC) PD designed and fabricated for high speed and high power applications. A UTC PD with a 40micrometer waveguide shows a 3dB bandwidth up to 40GHz and photocurrents of up to 10mA without saturation in our measurement range.