Improvement of Breakdown and DC-to-Pulse Dispersion Properties in Field-Plated InGaAs-InAlAs pHEMTs

Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany

Proceedings: IPRM 2011

Pages: 3Language: englishTyp: PDF

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Saguatti, Davide; Verzellesi, Giovanni (DISMI, Università di Modena e Reggio Emilia, Reggio Emilia, Italy)
Isa, Muammar Mohamad; Ian, Ka Wa; Missous, Mohamed (M&N Group, School of E&EE, The University of Manchester, Manchester, UK)
Chini, Alessandro; Fantini, Fausto (DII, Università di Modena e Reggio Emilia, Modena, Italy)

We report on novel, high voltage InGaAs-InAlAs pHEMTs, which have been processed on an optimized epilayer and incorporate field-plate structures of different dimensions. Fabricated devices demonstrate great improvements in breakdown voltage and gate leakage, while keeping the same DC and RF behaviour with respect to baseline devices, i.e. with no field-plate implemented. In addition, the field plate strongly attenuates DC-to-pulse dispersion, making these devices suitable for high-power-density RF power amplifiers.