Heteroepitaxial bonding of GaInAs quantum wells on Si: a new approach towards photonic integration on Si for devices operating at 1.55micrometer
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 3Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Talneau, A.; Chouteau, D.; Mauguin, O.; Largeau, L.; Sagnes, I.; Patriarche, G. (Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France)
Heteroepitaxial bonding of III-V materials, mainly InP on Si, without any intermediate dielectric layer, shall allow 1.55micrometer operating devices to be designed including nano-structuration for tailored spectral operation and no thermal limitation of performances. Bonded surfaces should be limited to the areas of active devices only. Preliminary results evidence the successful bonding of InGaAs quantum wells on Si.