Strain Effects on Performance of AlGaInAs/InP Single Quantum Well Lasers
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Sapkota, Durga Prasad; Kayastha, Madhu Sudan; Wakita, Koichi (Chubu University, Kasugai, Aichi 487-8501, Japan)
We have studied the effects of compressive and tensile strain of single quantum well lasers on differential gain, transparency carriers density and threshold current density. Aluminum composition is adjusted at 0.07 and 0.09 for compressive and tensile strain respectively. In both compressive and tensile strain quantum well, the minimum threshold current density was achieved at 1.5% strain as 110 Acm-2 and 125 Acm-2 respectively, with a cavity length of 400 µm.