Strain control using GaxIn1-xAs second cap layer during double-cap procedure in InAs / InP QDs structure
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDF
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Authors:
Hirooka, M.; Kawashima, F.; Iwane, Y.; Saegusa, T.; Shimomura, K. (Department of Engineering and Applied Sciences, Sophia University, 7-1 Kioi-Cho, Chiyoda-Ku, Tokyo 102-8554, Japan)
Abstract:
We have successfully demonstrated the strain control of the self assembled Stranski - Krastanov (S-K) InAs quantum dots (QDs) using double-cap procedure. GaxIn1-xAs second cap layer was introduced to compensate the strain of InAs QDs, and obtained the Ga composition of GaxIn1-xAs second cap layer to increase the PL intensity and to minimize the fluctuation of QDs size.