Self-Aligned Ohmic Contact Scheme to InGaAs Using Epitaxial Ge Growth
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 3Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Firrincieli, Andrea; Vincent, B.; Waldron, N.; Simoen, E.; Claeys, C.; Kittl, J. (imec, Kapeldreef 75, 3001 Leuven, Belgium)
Firrincieli, Andrea; Claeys, C. (Katholieke Universiteit Leuven (KULeuven), Kasteelpark Arenberg 10, 3001 Leuven, Belgium)
In this work we offer an integration-ready solution to obtain self-aligned ohmic contacts on n-type III-V layers. We demonstrate ohmic contacts on n-type In0.53Ga0.47As by means of selective growth of epitaxial Ge followed by selective Ni germaniation process. Circular Transfer Length Method (CTLM) is used to extract the values of the Specific Contact Resistivity pc of the contacts. Values of pc in the order of 4x10-5 Ohm-cm2 have been measured. This scheme, if further optimized, can contribute to the development of MOSFETs devices based on high-mobility materials.