InP-Based Self-Aligned Internally Series-Connected RTD/HBT for Threshold Gate ICs
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 3Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Park, Jaehong; Lee, Jongwon; Lee, Jooseok; Jeong, Yongsik; Yang, Kyounghoon (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-Dong, Yuseong-Gu, Daejeon, Republic of Korea)
An internally series-connected RTD (Resonant Tunneling Diode)/HBT (Heterojunction Bipolar Transistor) technology using an etch back process with a self-aligned base metallization has been proposed. The proposed device shows a reduced peak voltage compared to the externally series-connected device (from 0.88 to 0.77 V). The reduced parasitic resistance values are estimated to be in a range of 10~12 Ohm. To demonstrate an applicability of the developed approach to a basic digital gate, a threshold gate has been implemented. At a clock frequency of 3 GHz, the threshold gate IC exhibits the correct performance characteristics.