A 300 GHz InP/GaAsSb/InP HBT for high data rate applications
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDF
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Authors:
Maher, H.; Delmouly, V.; Rouchy, U.; Renvoise, M.; Frijlink, P.; Smith, D. (OMMIC, 2 chemin du Moulin, 94450, Limeil-Brévannes, France)
Zaknoune, M.; Ducatteau, D.; Avramovic, V. (IEMN Avenue Poincaré, 59652, Villeneuve d'Ascq cedex, France)
Scavennec, A. (Apecofi, 25 Boulevard Arago, 75013 Paris, France)
Godin, J.; Riet, M. (Alcatel-Thales III-V lab, Route de Nozay, 91460, Marcoussis, France)
Maneux, C. (IMS 351 Cours de la Libération, 33405, Talence, France)
Ardouin, B. (Xmod Technologies 74, Rue Georges Bonnac, 33000, Bordeaux, France)
Abstract:
In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35micrometer and the base contact is 0.3micrometer wide. The base and emitter contacts present an excellent contact resistivity. The current gain of the 0.35x5micrometer2 transistor is equal to 21 and the breakdown voltage is equal to 4V. The current gain cut-off frequency and the unilateral gain cut-off frequency are over 300 GHz and 380 GHz respectively. The transistor is fabricated in an industrial environment at OMMIC foundry.