X-ray diffraction characterization of polycrystalline InP films grown by molecular-beam deposition: Estimation of stacking-fault probability
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 3Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Kajikawa, Y.; Iseki, Y.; Matsui, Y. (Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishi-Kawatsu, Matsue, Shimane 690-8504, Japan)
X-ray diffraction characterization was performed on polycrystalline InP films deposited on glass substrates by molecular-beam deposition at substrate temperatures of 200, 250, and 320deg C. The peak shift analysis developed for estimating stacking-fault probability in fcc metals is applied to cubic semiconductors for the first time. The net stacking-fault probabilities alphaSF(hkl) = α ISF(hkl) - α ESF(hkl) (alphaISF(hkl) and alphaESF(hkl)) being intrinsic and extrinsic stacking-fault probabilities, respectively) together with the fractional changes epsilonSF(hkl) in interplanar spacing at the stacking fault for (111)- and (100)-oriented crystallites are presented as a function of the substrate temperature.