Single Wavelength (Non-Grating) High-Mesa Asymmetric Active-MMI All Optical Bi-Stable Laser Diodes
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 4Language: englishTyp: PDFPersonal VDE Members are entitled to a 10% discount on this title
Jiang, H.; Chaen, Y.; Hagio, T.; Tsuruda, K.; Jizodo, M.; Hamamoto, K. (Interdisciplinary Graduate School of Eng. Sciences (I-EggS), Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan)
Matsuo, S. (NTT photonics laboratories, 3-1 Morinosato Wakamiya, 243-0198, Japan)
High-mesa asymmetric active-MMI bi-stable laser diodes are proposed and demonstrated that resulted in singlewavelength emission (λ=1556nm, SMSR=30dB, non-grating), with all optical bi-stable switching operation, for the first time.