Design of an integrated power converter in Wide Band Gap for harsh environments
Conference: CIPS 2012 - 7th International Conference on Integrated Power Electronics Systems
03/06/2012 - 03/08/2012 at Nuremberg, Germany
Proceedings: CIPS 2012
Pages: 6Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Mogniotte, Jean-Francois; Tournier, Dominique; Bevilacqua, Pascal; Godignon, Philippe; Planson, Dominique (Université de Lyon, CNRS, Laboratoire Ampère, INSA-Lyon, Ampere, UMR 5005, 69621, France)
Abstract:
AMPERE laboratory (Lyon, France) and Center National Microelectronics of Barcelona (SPAIN) have recently developed lateral MESFETs in SiC. The current purpose is to develop electronic systems based on these MESFETs for applications operating in harsh environments (e.g. High Temperature > 300 °C). This paper presents the design of an integrated power converter with its driver in SiC and the characterisation of elementary functions.