Global Thickness Measurement System for Metal Layer on Wafer

Conference: ICPT 2012 - International Conference on Planarization / CMP Technology
10/15/2012 - 10/17/2012 at Grenoble, France

Proceedings: ICPT 2012

Pages: 5Language: englishTyp: PDF

Personal VDE Members are entitled to a 10% discount on this title

Yu, Qiang; Zhao, Dewen; Li, Hongkai; Qu, Zilian; Qian Zhao; Lu, Xinchun; Meng, Yonggang (State Key Lab of Tribology, Department of Precision Instruments and Mechanology, Tsinghua University, Beijing, 100084, People’s Republic of China)

In VLSI manufacturing processes, metal layers are often used, such as Cu, Al and W, etc. It is required to accurately detect the metal layer thickness distribution on wafer, which is important for the process parameter design. Therefore, a fast and nondestructive nanometer detecting technology is needed for this measurement. In this study, we proposed and designed a global nanometer metal film thickness measurement system, which is based on eddy current testing method. Through a proper testing scheme and a new calibration method, the distribution of the global thickness of the metal layer on wafer could be measured accurately and quickly. Keywords: Nano-metal films, Thickness measurement, Eddy current method, CMP equipment and metrology